http://www.cnr.it/ontology/cnr/individuo/prodotto/ID25297
Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures (Articolo in rivista)
- Type
- Label
- Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures (Articolo in rivista) (literal)
- Anno
- 2009-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.3157838 (literal)
- Alternative label
Trotta R, Polimeni A, Capizzi M, F. Martelli, S. Rubini, M. Francardi, A. Gerardino, and L. Mariucci (2009)
Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures
in Applied physics letters
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Trotta R, Polimeni A, Capizzi M, F. Martelli, S. Rubini, M. Francardi, A. Gerardino, and L. Mariucci (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma, Italy
2TASC, INFM-CNR, Area Science Park, S.S. 14, Km. 163.5, 34012 Trieste, Italy
3IFN-CNR, via Cineto Romano 42, 00156 Roma, Italy (literal)
- Titolo
- Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures (literal)
- Abstract
- The expansion of the GaAsN lattice following hydrogen incorporation is spatially patterned so as to
generate an anisotropic stress in the sample growth plane. The resulting in-plane symmetry breaking
determines an in-plane polarization dependence of the light emitted along the crystal growth
direction in agreement with optical selection rules and strain field calculations. (literal)
- Prodotto di
- Autore CNR
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