Giant thermovoltage in single InAs nanowire field-effect transistors (Articolo in rivista)

Type
Label
  • Giant thermovoltage in single InAs nanowire field-effect transistors (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1021/nl401482p (literal)
Alternative label
  • Roddaro, S.a b and Ercolani, D.a and Safeen, M.A.a and Suomalainen, S.c and Rossella, F.a and Giazotto, F.a and Sorba, L.a and Beltram, F.a (2013)
    Giant thermovoltage in single InAs nanowire field-effect transistors
    in Nano letters (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Roddaro, S.a b and Ercolani, D.a and Safeen, M.A.a and Suomalainen, S.c and Rossella, F.a and Giazotto, F.a and Sorba, L.a and Beltram, F.a (literal)
Pagina inizio
  • 3638 (literal)
Pagina fine
  • 3642 (literal)
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  • cited By (since 1996)0 (literal)
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  • http://www.scopus.com/inward/record.url?eid=2-s2.0-84881566760&partnerID=40&md5=b5ba1122dcff62951ed6ae9c8dad7488 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 13 (literal)
Rivista
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  • 8 (literal)
Note
  • Scopu (literal)
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  • NEST, Scuola Normale Superiore, Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, I-56127 Pisa, Italy; Istituto Officina Dei Materiali-CNR, Basovizza S.S. 14 km 163.5, I-34149 Trieste, Italy; Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, Fin-33101 Tampere, Finland (literal)
Titolo
  • Giant thermovoltage in single InAs nanowire field-effect transistors (literal)
Abstract
  • Millivolt range thermovoltage is demonstrated in single InAs nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias ?T > 10 K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise mapping of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity ? between room temperature and 100 K. Based on these experimental data a novel estimate of the electron mobility is given. This value is compared with the result of standard field-effect based mobility estimates and discussed in relation to the effect of charge traps in the devices. © 2013 American Chemical Society. (literal)
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