http://www.cnr.it/ontology/cnr/individuo/prodotto/ID252360
Molecular Reorganization in Organic Field-Effect Transistors and Its Effect on Two-Dimensional Charge Transport Pathways (Articolo in rivista)
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- Label
- Molecular Reorganization in Organic Field-Effect Transistors and Its Effect on Two-Dimensional Charge Transport Pathways (Articolo in rivista) (literal)
- Anno
- 2013-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1021/nn304733w (literal)
- Alternative label
Liscio, F; Albonetti, C; Broch, K; Shehu, A; Quiroga, SD; Ferlauto, L; Frank, C; Kowarik, S; Nervo, R; Gerlach, A; Milita, S; Schreibers, F; Biscarini, F (2013)
Molecular Reorganization in Organic Field-Effect Transistors and Its Effect on Two-Dimensional Charge Transport Pathways
in ACS nano
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Liscio, F; Albonetti, C; Broch, K; Shehu, A; Quiroga, SD; Ferlauto, L; Frank, C; Kowarik, S; Nervo, R; Gerlach, A; Milita, S; Schreibers, F; Biscarini, F (literal)
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- CNR, IMM, I-40129 Bologna, Italy
CNR, ISMN, I-40129 Bologna, Italy
Univ Tubingen, Inst Angew Phys, D-72076 Tubingen, Germany
Humboldt Univ, Inst Phys, D-12489 Berlin, Germany
ESRF, F-38043 Grenoble, France (literal)
- Titolo
- Molecular Reorganization in Organic Field-Effect Transistors and Its Effect on Two-Dimensional Charge Transport Pathways (literal)
- Abstract
- Charge transport in organic thin film transistors takes place in the first few molecular layers in contact with the gate dielectric. Here we demonstrate that the charge transport pathways in these devices are extremely sensitive to the orientational defects of the first monolayers, which arise from specific growth conditions. Although these defects partially heal during the growth, they cause depletion of charge carriers in the first monolayer, and drive the current to flow in the monolayers above the first one. Moreover, the residual defects induce lower crystalline order and charge mobility. These results, which are not intuitively explained by electrostatics arguments, have been obtained by combining in situ real time structural and electrical characterization together with ex situ AFM measurements, on thin films of a relevant n-type organic semiconductor, N,N-bis(n-octyI)-dicyanoperylene3,4:9,10-bis dicarboximide grown by sublimation in a quasi-layer-by-layer mode at different substrate temperatures. (literal)
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