Charge transport in graphene-polythiophene blends as studied by Kelvin Probe Force Microscopy and transistor characterization (Articolo in rivista)

Type
Label
  • Charge transport in graphene-polythiophene blends as studied by Kelvin Probe Force Microscopy and transistor characterization (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1039/c0jm02940h (literal)
Alternative label
  • Liscio, Andrea and Veronese, Giulio Paolo and Treossi, Emanuele and Suriano, Francesco and Rossella, Francesco and Bellani, Vittorio and Rizzoli, Rita and Samori, Paolo and Palermo, Vincenzo (2011)
    Charge transport in graphene-polythiophene blends as studied by Kelvin Probe Force Microscopy and transistor characterization
    in Journal of materials chemistry (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Liscio, Andrea and Veronese, Giulio Paolo and Treossi, Emanuele and Suriano, Francesco and Rossella, Francesco and Bellani, Vittorio and Rizzoli, Rita and Samori, Paolo and Palermo, Vincenzo (literal)
Pagina inizio
  • 2924 (literal)
Pagina fine
  • 2931 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 21 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 9 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • ISOF--Consiglio Nazionale delle Ricerche, via Gobetti 101, Bologna, Italy IMM--Consiglio Nazionale delle Ricerche, via Gobetti 101, Bologna, Italy Dipartimento di Fisica \"A. Volta\" and CNISM, Universitá di Pavia, via Bassi 6, Pavia, Italy Nanochemistry Laboratory, ISIS--CNRS 7006, Université de Strasbourg, 8 allée Gaspard Monge, Strasbourg, France (literal)
Titolo
  • Charge transport in graphene-polythiophene blends as studied by Kelvin Probe Force Microscopy and transistor characterization (literal)
Abstract
  • Blends of reduced graphene oxide (RGO) and poly(3-hexylthiophene) (P3HT) are used as the active layer of field-effect transistors (FETs). By using sequential deposition of the two components, the density of RGO sheets can be tuned linearly, thereby modulating their contribution to the charge transport in the transistors, and the onset of charge percolation. The surface potential of RGO, P3HT and source-drain contacts is measured on the nanometric scale with Kelvin Probe Force Microscopy (KPFM), and correlated with the macroscopic performance of the FETs. KPFM is also used to monitor the potential decay along the channel in the working FETs. (literal)
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