Parametrization of optical properties of indium-tin-oxide thin films by spectroscopic ellipsometry: Substrate interfacial reactivity (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Parametrization of optical properties of indium-tin-oxide thin films by spectroscopic ellipsometry: Substrate interfacial reactivity (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1116/1.1421596 (literal)

Alternative label

• Losurdo, M and Giangregorio, M and Capezzuto, P and Bruno, G and De Rosa, R and Roca, F and Summonte, C and Pla, J and Rizzoli, R (2002)
  Parametrization of optical properties of indium-tin-oxide thin films by spectroscopic ellipsometry: Substrate interfacial reactivity
  in Journal of vacuum science & technology. A. Vacuum, surfaces, and films
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Losurdo, M and Giangregorio, M and Capezzuto, P and Bruno, G and De Rosa, R and Roca, F and Summonte, C and Pla, J and Rizzoli, R (literal)

Pagina inizio

• 37 (literal)

Pagina fine

• 42 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 20 (literal)

Rivista

• Journal of vacuum science & technology. A. Vacuum, surfaces, and films (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Plasma Chemistry Research Center--CNR, via Orabona, 4-70126 Bari, Italy CR ENEA Portici, Loc. Granatello, 80055 Napoli, Italy Lamel Institute--CNR, via Gobetti 101, I-40129 Bologna, Italy (literal)

Titolo

• Parametrization of optical properties of indium-tin-oxide thin films by spectroscopic ellipsometry: Substrate interfacial reactivity (literal)

Abstract

• Indium-tin-oxide (ITO) films deposited by sputtering and e-gun evaporation on both transparent (Corning glass) and opaque (c-Si, c-Si/SiO2) substrates and in c-Si/a-Si:H/ITO heterostructures have been analyzed by spectroscopic ellipsometry (SE) in the range 1.5-5.0 eV. Taking the SE advantage of being applicable to absorbent substrate, ellipsometry is used to determine the spectra of the refractive index and extinction coefficient of the ITO films. The effect of the substrate surface on the ITO optical properties is focused and discussed. To this aim, a parametrized equation combining the Drude model, which considers the free-carrier response at the infrared end, and a double Lorentzian oscillator, which takes into account the interband transition contribution at the UV end, is used to model the ITO optical properties in the useful UV-visible range, whatever the substrate and deposition technique. Ellipsometric analysis is corroborated by sheet resistance measurements. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• MARIA MICHELA GIANGREGORIO (Persona)
• CATERINA SUMMONTE (Persona)
• MARIA LOSURDO (Unità di personale interno)
• GIOVANNI BRUNO (Unità di personale interno)
• RITA RIZZOLI (Persona)

Incoming links:

Autore CNR di

• GIOVANNI BRUNO (Unità di personale interno)
• RITA RIZZOLI (Persona)
• CATERINA SUMMONTE (Persona)
• MARIA LOSURDO (Unità di personale interno)
• MARIA MICHELA GIANGREGORIO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of vacuum science & technology. A. Vacuum, surfaces, and films (Rivista)