http://www.cnr.it/ontology/cnr/individuo/prodotto/ID251735
Correlation between current transport and defects in n+/p 6H-SiC diodes (Contributo in atti di convegno)
- Type
- Label
- Correlation between current transport and defects in n+/p 6H-SiC diodes (Contributo in atti di convegno) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.4028/www.scientific.net/MSF.527-529.811 (literal)
- Alternative label
Canino, M; Castaldini, A ; Cavallini, A ; Moscatelli, F ; Nipoti, R ; Poggi, A (2006)
Correlation between current transport and defects in n+/p 6H-SiC diodes
in International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Pittsburgh, PA, SEP 18-23, 2005
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Canino, M; Castaldini, A ; Cavallini, A ; Moscatelli, F ; Nipoti, R ; Poggi, A (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
- Silicon Carbide and Related Materials 2005 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Univ Bologna, Dipartmento Fis, I-40126 Bologna, Italy
CNR, IMM, Sez Bologna, I-40129 Bologna, Italy
Univ Perugia, DIEI, I-06125 Perugia, Italy (literal)
- Titolo
- Correlation between current transport and defects in n+/p 6H-SiC diodes (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
- 978-0-87849-425-5 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
- Abstract
- This paper reports on the defects created in a 6H-SiC P-type substrate by a process of ion implantation and a quite low temperature annealing (1300 degrees C), suitable for the realization of the source/drain regions of a MOSFET because it does not give rise to step bunching phenomena. Current voltage measurements showed the presence of a group of diodes featured by excess current. The effects of defects under the implanted layer on the transport properties of the diodes were investigated by DLTS: four hole traps were detected in all the measured diodes; besides, a broadened peak around 550 K was detected in the diodes that show excess current. (literal)
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