Correlation between current transport and defects in n+/p 6H-SiC diodes (Contributo in atti di convegno)

Type
Label
  • Correlation between current transport and defects in n+/p 6H-SiC diodes (Contributo in atti di convegno) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.4028/www.scientific.net/MSF.527-529.811 (literal)
Alternative label
  • Canino, M; Castaldini, A ; Cavallini, A ; Moscatelli, F ; Nipoti, R ; Poggi, A (2006)
    Correlation between current transport and defects in n+/p 6H-SiC diodes
    in International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Pittsburgh, PA, SEP 18-23, 2005
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Canino, M; Castaldini, A ; Cavallini, A ; Moscatelli, F ; Nipoti, R ; Poggi, A (literal)
Pagina inizio
  • 811 (literal)
Pagina fine
  • 814 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • Silicon Carbide and Related Materials 2005 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana
  • 527-529 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Bologna, Dipartmento Fis, I-40126 Bologna, Italy CNR, IMM, Sez Bologna, I-40129 Bologna, Italy Univ Perugia, DIEI, I-06125 Perugia, Italy (literal)
Titolo
  • Correlation between current transport and defects in n+/p 6H-SiC diodes (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-0-87849-425-5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • Devaty, RP (literal)
Abstract
  • This paper reports on the defects created in a 6H-SiC P-type substrate by a process of ion implantation and a quite low temperature annealing (1300 degrees C), suitable for the realization of the source/drain regions of a MOSFET because it does not give rise to step bunching phenomena. Current voltage measurements showed the presence of a group of diodes featured by excess current. The effects of defects under the implanted layer on the transport properties of the diodes were investigated by DLTS: four hole traps were detected in all the measured diodes; besides, a broadened peak around 550 K was detected in the diodes that show excess current. (literal)
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