Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process (Contributo in atti di convegno) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.4028/www.scientific.net/MSF.556-557.571 (literal)

Alternative label

• Canino, M; Giannazzo, F ; Roccaforte, F ; Poggi, A ; Solmi, S ; Raineri, V ; Nipoti, R (2007)
  Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process
  in 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, SEP, 2006
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Canino, M; Giannazzo, F ; Roccaforte, F ; Poggi, A ; Solmi, S ; Raineri, V ; Nipoti, R (literal)

Pagina inizio

• 571 (literal)

Pagina fine

• 574 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• Silicon Carbide and Related Materials 2006 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 556-557 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Bologna, Dipartmento Fis, Viale C Berti Pichat 6-2, I-40127 Bologna, Italy. CNR_IMM-Bologna, Via Gobetti 101, 40129 Bologna, Italy (literal)

Titolo

• Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process (literal)

Abstract

• The surface morphology and the electrical activation of P+ implanted 4H-SiC were investigated with respect to annealing treatments that differ only for the heating rate. P+ implantation was carried out in lightly doped n-type epitaxial layers. The implantation temperature was 300 degrees C. The computed P profile was 250 nm thick with a concentration of 1x10(20) cm(-3). Two samples underwent annealing at 1400 degrees C in argon with different constant ramp up rates equal to 0.05 degrees C/s and 40 degrees C/s. A third sample underwent an incoherent light Rapid Thermal Annealing (RTA) at 1100 degrees C in argon before the annealing at 1400 degrees C with the lower ramp rate. The ramp up of the RTA process is a few hundred degrees per second. Atomic Force Microscopy (AFM) micrographs pointed out that the surface roughness of the samples annealed at 1400 degrees C increases with increasing heating rate and that the critical temperature for surface roughening is above 1100 degrees C. Independently on the annealing cycle, Scanning Capacitance Microscopy (SCM) measurements showed that the P profiles are uniform over the implantation thickness and have plateau concentration around 9x10(18) cm(-3) in all the implanted samples. The fraction of P atoms activated as donors is 13% of the total implanted fluence. (literal)

Editore

• TRANS TECH PUBLICATIONS LTD (Editore)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• SANDRO SOLMI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• ANTONELLA POGGI (Unità di personale interno)
• FILIPPO GIANNAZZO (Persona)
• FABRIZIO ROCCAFORTE (Persona)

Insieme di parole chiave

• Parole chiave di "Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• SANDRO SOLMI (Unità di personale interno)
• ANTONELLA POGGI (Unità di personale interno)
• FILIPPO GIANNAZZO (Persona)
• ROBERTA NIPOTI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Editore di

• TRANS TECH PUBLICATIONS LTD (Editore)

Insieme di parole chiave di

• Parole chiave di "Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process" (Insieme di parole chiave)