Low-power resistive switching in Au/NiO/Au nanowire arrays (Articolo in rivista)

Type
Label
  • Low-power resistive switching in Au/NiO/Au nanowire arrays (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.4769044 (literal)
Alternative label
  • S. Brivio, G. Tallarida, D. Perego, S. Franz, D. Deleruyelle, C. Muller, S. Spiga (2012)
    Low-power resistive switching in Au/NiO/Au nanowire arrays
    in Applied physics letters; AIP, American institute of physics, Melville, NY (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • S. Brivio, G. Tallarida, D. Perego, S. Franz, D. Deleruyelle, C. Muller, S. Spiga (literal)
Pagina inizio
  • 223510 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 101 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 22 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM CNR, Lab MDM, I-20864 Agrate Brianza, MB, Italy Politecn Milan, Dipartimento Chim Mat & Ing Chim G Natta, I-20131 Milan, Italy Aix Marseille Univ, IM2NP, UMR CNRS 7334, F-13451 Marseille 20, France (literal)
Titolo
  • Low-power resistive switching in Au/NiO/Au nanowire arrays (literal)
Abstract
  • Arrays of vertical nanowires structured in Au/NiO/Au segments with 50 nm diameter are characterized by conductive atomic force microscopy to investigate unipolar resistive switching in NiO at the nanoscale. The switching cycles are characterized by extremely low power consumption down to 1.3 nW, which constitutes a significant improvement in nanowire-based resistive switching memory devices. The trend of the reset current as a function of the set resistance, typical of unipolar memories, is extended to a much wider current range than what is reported in literature, confirming the role of Joule heating in the reset process for very low reset currents. (literal)
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