Perpendicular magnetic anisotropy in Ta/CoFeB/MgO systems synthesized on treated SiN/SiO2 substrates for magnetic memories (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Perpendicular magnetic anisotropy in Ta/CoFeB/MgO systems synthesized on treated SiN/SiO2 substrates for magnetic memories (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.tsf.2012.12.111 (literal)

Alternative label

• R. Mantovan, A. Lamperti, G. Tallarida, L. Baldi, M. Mariani, B. Ocker, S.M. Ahn, I. Barisic, D. Ravelosona (2013)
  Perpendicular magnetic anisotropy in Ta/CoFeB/MgO systems synthesized on treated SiN/SiO2 substrates for magnetic memories
  in Thin solid films (Print); Elsevier Science SA, Lausanne (Svizzera)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• R. Mantovan, A. Lamperti, G. Tallarida, L. Baldi, M. Mariani, B. Ocker, S.M. Ahn, I. Barisic, D. Ravelosona (literal)

Pagina inizio

• 75 (literal)

Pagina fine

• 78 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 533 (literal)

Rivista

• Thin solid films (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, Lab MDM IMM, I-20864 Agrate Brianza, Italy Micron Semicond Italia Srl, I-20864 Agrate Brianza, Italy Singulus Technol AG, D-63796 Kahl, Germany Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France (literal)

Titolo

• Perpendicular magnetic anisotropy in Ta/CoFeB/MgO systems synthesized on treated SiN/SiO2 substrates for magnetic memories (literal)

Abstract

• Ta(5 nm)/CoFeB(1 nm)/MgO(2 nm) stacks have been deposited by magnetron sputtering on top of 8\" Si/SiN/SiO2 substrates, where the effects of different passivation steps related to copper damascene processes have been simulated. It is shown that excellent thickness uniformity of the deposited stack is achieved on 8\" areas, and strong uniaxial perpendicular magnetic anisotropy K-u up to 0.5-1x10(6) J/m(3) develops in the 1 nm CoFeB following thermal annealing at 300 degrees C for 2 h, irrespective of the adopted passivation treatment. The CoFeB coercive field varies from 0.21 to 0.51 kA/m for substrate surface roughness in the range of 0.45-0.55 nm. These results are of relevance in the view of integrating into standard complementary metal-oxide semiconductor process, advanced magnetic memory concepts based on perpendicular magnetic anisotropy in ultrathin layers. (literal)

Editore

• Elsevier Science SA (Editore)

Prodotto di

• Materiali e Dispositivi a Dimensionalità Ridotta (MD.P06.036.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• GRAZIELLA TALLARIDA (Persona)
• ALESSIO LAMPERTI (Unità di personale interno)
• ROBERTO MANTOVAN (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "Perpendicular magnetic anisotropy in Ta/CoFeB/MgO systems synthesized on treated SiN/SiO2 substrates for magnetic memories" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e Dispositivi a Dimensionalità Ridotta (MD.P06.036.001) (Modulo)

Autore CNR di

• ROBERTO MANTOVAN (Unità di personale interno)
• GRAZIELLA TALLARIDA (Persona)
• ALESSIO LAMPERTI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Thin solid films (Rivista)

Editore di

• Elsevier Science SA (Editore)

Insieme di parole chiave di

• Parole chiave di "Perpendicular magnetic anisotropy in Ta/CoFeB/MgO systems synthesized on treated SiN/SiO2 substrates for magnetic memories" (Insieme di parole chiave)