Local structure of Sn implanted in thin SiO2 films (Articolo in rivista)

Type
Label
  • Local structure of Sn implanted in thin SiO2 films (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.68.205419 (literal)
Alternative label
  • Spiga, S (Spiga, S); Mantovan, R (Mantovan, R); Fanciulli, M (Fanciulli, M); Ferretti, N (Ferretti, N); Boscherini, F (Boscherini, F); d'Acapito, F (d'Acapito, F); Schmidt, B (Schmidt, B); Grotzschel, R (Grotzschel, R); Mucklich, A (Mucklich, A) (2003)
    Local structure of Sn implanted in thin SiO2 films
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Spiga, S (Spiga, S); Mantovan, R (Mantovan, R); Fanciulli, M (Fanciulli, M); Ferretti, N (Ferretti, N); Boscherini, F (Boscherini, F); d'Acapito, F (d'Acapito, F); Schmidt, B (Schmidt, B); Grotzschel, R (Grotzschel, R); Mucklich, A (Mucklich, A) (literal)
Pagina inizio
  • 205419 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 68 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 20 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Laboratorio MDM-INFM, via C. Olivetti 2, Agrate Brianza I-20041, Italy INFM and Department of Physics, University of Bologna, Bologna, Italy INFM-OGG c/o ESRF, GILDA CRG, Bo?^te Postale 220, F-38043, Grenoble, France FZR, Institute of Ion Beam Physics and Material Research, D-01314 Dresden, Germany (literal)
Titolo
  • Local structure of Sn implanted in thin SiO2 films (literal)
Abstract
  • The formation and the structural properties of Sn nanocrystals produced by ion implantation in thin SiO2 films was investigated by Sn-119 conversion electron Mossbauer spectroscopy (CEMS), x-ray absorption spectroscopy (XAS), and transmission electron microscopy (TEM). Sn ion implantation was performed at 80 keV with a fluence of 1x10(16) cm(-2), positioning the peak of the implantation profile in the middle of the SiO2. The annealing treatments were performed in the temperature range 800-1100degreesC by rapid thermal processing. CEMS and XAS provided unique information on the local atomic and electronic environment of Sn in SiO2 allowing a detailed investigation of the effect of different annealing conditions. In the as-implanted state all Sn ions are oxidized (with both Sn2+ and Sn4+ oxidation states present), while annealing induces the formation of beta-Sn nanoclusters. TEM showed that cluster sizes are in the range 7-17 nm. For clusters with average diameter <10 nm, XAS detected a reduction in coordination number and interatomic distances. Both XAS and CEMS indicate an increase in the static disorder in the metallic clusters. The investigated annealing treatments do not lead to a complete precipitation of Sn atoms in the metallic phase, leaving a fraction of them oxidized. (literal)
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