Bulk-like Si(001) atomic rearrangement artificially created at the Ge/Sb/Si (001) interface (Articolo in rivista)

Type
Label
  • Bulk-like Si(001) atomic rearrangement artificially created at the Ge/Sb/Si (001) interface (Articolo in rivista) (literal)
Anno
  • 1998-01-01T00:00:00+01:00 (literal)
Alternative label
  • Perfetti, P. and De Padova, P. and Larciprete, R. and Quaresima, C. and Ottaviani C. (1998)
    Bulk-like Si(001) atomic rearrangement artificially created at the Ge/Sb/Si (001) interface
    in Nuovo cimento della Società italiana di fisica. D Condensed matter, atomic, molecular and chemical physics, biophysics (Testo stamp.)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Perfetti, P. and De Padova, P. and Larciprete, R. and Quaresima, C. and Ottaviani C. (literal)
Pagina inizio
  • 1029 (literal)
Pagina fine
  • 1037 (literal)
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  • cited By (since 1996)0 (literal)
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  • http://www.scopus.com/inward/record.url?eid=2-s2.0-33749525137&partnerID=40&md5=0e8e19d66ad283ecce9be2f8d5a05134 (literal)
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  • 20 (literal)
Rivista
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  • 7-9 (literal)
Note
  • Scopu (literal)
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  • CNR-ISM, Via de Fosso del Cavaliere, 00133 Roma, Italy (literal)
Titolo
  • Bulk-like Si(001) atomic rearrangement artificially created at the Ge/Sb/Si (001) interface (literal)
Abstract
  • -We report here on the electronic properties of the Ge/Sb/Si(001) interface formation studied by very high-energy-resolution photoemission spectroscopy using synchrotron radiation. Surface- and bulk-sensitive measurements of the core levels of the different atomic species give a clear indication of the occurrence of a site exchange process between germanium and antimony, when Ge is deposited on the already prepared Sb/Si(001) interface. We demonstrate that the use of surfactant atoms like Sb at the strained Ge/Si(001) interface produces a perfect epitaxial interface, where the Si atoms are in register with the bulk geometrical positions. © Società Italiana di Fisica. (literal)
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