http://www.cnr.it/ontology/cnr/individuo/prodotto/ID250658
Bulk-like Si(001) atomic rearrangement artificially created at the Ge/Sb/Si (001) interface (Articolo in rivista)
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- Bulk-like Si(001) atomic rearrangement artificially created at the Ge/Sb/Si (001) interface (Articolo in rivista) (literal)
- Anno
- 1998-01-01T00:00:00+01:00 (literal)
- Alternative label
Perfetti, P. and De Padova, P. and Larciprete, R. and Quaresima, C. and Ottaviani C. (1998)
Bulk-like Si(001) atomic rearrangement artificially created at the Ge/Sb/Si (001) interface
in Nuovo cimento della Società italiana di fisica. D Condensed matter, atomic, molecular and chemical physics, biophysics (Testo stamp.)
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- Perfetti, P. and De Padova, P. and Larciprete, R. and Quaresima, C. and Ottaviani C. (literal)
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- CNR-ISM, Via de Fosso del Cavaliere, 00133 Roma, Italy (literal)
- Titolo
- Bulk-like Si(001) atomic rearrangement artificially created at the Ge/Sb/Si (001) interface (literal)
- Abstract
- -We report here on the electronic properties of the Ge/Sb/Si(001) interface formation studied by very high-energy-resolution photoemission spectroscopy using synchrotron radiation. Surface- and bulk-sensitive measurements of the core levels of the different atomic species give a clear indication of the occurrence of a site exchange process between germanium and antimony, when Ge is deposited on the already prepared Sb/Si(001) interface. We demonstrate that the use of surfactant atoms like Sb at the strained Ge/Si(001) interface produces a perfect epitaxial interface, where the Si atoms are in register with the bulk geometrical positions. © Società Italiana di Fisica. (literal)
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