http://www.cnr.it/ontology/cnr/individuo/prodotto/ID25055
Effect of active layer thickness on electrical characteristics of pentacene TFTs with PMMA buffer layer (Articolo in rivista)
- Type
- Label
- Effect of active layer thickness on electrical characteristics of pentacene TFTs with PMMA buffer layer (Articolo in rivista) (literal)
- Anno
- 2008-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.sse.2007.10.010 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- L. Mariucci; D. Simeone; S. Cipolloni; L. Maiolo; A. Pecora; G. Fortunato; S. Brotherton (literal)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
- accettato per la pubblicazione (literal)
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- IFN-CNR (L. Mariucci; D. Simeone; S. Cipolloni; L. Maiolo; A. Pecora; G. Fortunato)
TFT Consultant (S. Brotherton) (literal)
- Titolo
- Effect of active layer thickness on electrical characteristics of pentacene TFTs with PMMA buffer layer (literal)
- Abstract
- We studied transfer characteristics of pentacene thin film transistors, fabricated by using polymethylmetacrylate (PMMA) buffer
layer, in order to evaluate the parasitic series resistance in devices with different active layer thickness (10-80 nm) and contact architectures
(top and bottom contacts). For bottom contact TFTs, the highest series resistance (1.7 · 104 X cm) was found for the thinnest
pentacene films, probably related to step coverage problems of the thin pentacene film over the gold contacts. In contrast, for the
top contact TFTs, the 10 nm pentacene films had the lowest resistance (?1.8 · 103 X cm) and the resistance increases to
?8 · 104 X cm for the thicker films. The results can be related to the effect of the series resistance induced by the vertical transport
through the pentacene film. (literal)
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