Radiation Hardness of Minimum Ionizing Particle Detectors Based on SiC p+n Junctions (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• Radiation Hardness of Minimum Ionizing Particle Detectors Based on SiC p+n Junctions (Contributo in atti di convegno) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1109/NSSMIC.2005.1596300 (literal)

Alternative label

• Moscatelli, F.; Scorzoni, A.; Poggi, A.; Bruzzi, M.; Sciortino, S.; Lagomarsino, S.; Wagner, G.; Nipoti, R (2005)
  Radiation Hardness of Minimum Ionizing Particle Detectors Based on SiC p+n Junctions
  in Nuclear Science Symposium 2005, Fajardo, PR, 23-29/10/2005
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Moscatelli, F.; Scorzoni, A.; Poggi, A.; Bruzzi, M.; Sciortino, S.; Lagomarsino, S.; Wagner, G.; Nipoti, R (literal)

Pagina inizio

• 490 (literal)

Pagina fine

• 494 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• 2005 IEEE Nuclear Science Symposium Conference Record, Vols 1-5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• Vols 1-5 (literal)

Rivista

• IEEE Nuclear Science Symposium conference record (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• INFN of Perugia, via Pascoli, 06123 Perugia, Italy, DIEI, Università di Perugia, via G. Duranti 93, 06125 Perugia, Italy CNR- IMM sez. Bologna via Gobetti 101, I-40129 Bologna, Italy Dipartimento di Energetica and INFN of Florence, Polo Scientifico, Via Sansone 1, 50019 Sesto Fiorentino Italy Günter Wagner is with Institut für Kristallzüchtung, D-12489 Berlin, Germany (literal)

Titolo

• Radiation Hardness of Minimum Ionizing Particle Detectors Based on SiC p+n Junctions (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 0-7803-9221-3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume

• Yu, B (literal)

Abstract

• n this work we analyzed the radiation hardness of SiC p+/n diodes used as minimum ionizing particle (MIP) detectors after very high 1 MeV neutron fluences. The diode structure is based on ion implanted p+ emitter in an n-type epilayer with thickness equal to 55 ?m and donor doping ND = 2×1014 cm-3. The diode breakdown voltages were above 1000 V. At 1000 V the leakage currents are of the order of 1 nA for all the measured diodes. The full depletion voltage is near 220-250 V. The charge collection efficiency to minimum ionising particle has been investigated by a 90Sr ? source. At 250 V the collected charge of the unirradiated diodes saturates near 3000 e-. At bias voltages over than 100 V the energy spectrum of the collected charge was found to consist of two peaks clearly separated. At around 250 V the signal saturates, in agreement with CV results. These devices have been irradiated considering 6 different fluences, logarithmically distributed in the range 1014-1016 1 MeV neutrons/cm2. The leakage current after irradiation decreases. The collected charges decrease for increasing fluences, remaining very high only until some 1014 n/cm2. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ANTONELLA POGGI (Unità di personale interno)
• FRANCESCO MOSCATELLI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• ANDREA SCORZONI (Persona)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ANTONELLA POGGI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• ANDREA SCORZONI (Persona)
• FRANCESCO MOSCATELLI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• IEEE Nuclear Science Symposium conference record (Rivista)