http://www.cnr.it/ontology/cnr/individuo/prodotto/ID24913
Dual frequency PECVD silicon nitride for fabrication of CMUTs' membranes (Articolo in rivista)
- Type
- Label
- Dual frequency PECVD silicon nitride for fabrication of CMUTs' membranes (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.sna.2005.11.053 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- E. Cianci 1; A. Schina 1; A. Minotti 1; S. Quaresima 1; V. Foglietti 1; (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Istituto di Fotonica e Nanotecnologie IFN-CNR, Via Cineto Romano 42, 00156 Roma, Italy (literal)
- Titolo
- Dual frequency PECVD silicon nitride for fabrication of CMUTs' membranes (literal)
- Abstract
- Dual frequency plasma-enhanced chemical-vapour deposition (DF-PECVD) of silicon nitride has been investigated for the fabrication of
membranes for micromechanical applications, and in particular for capacitive micromachined ultrasonic transducers (CMUTs). The use of high
and low frequency plasma excitations, at 13.56MHz and 340 KHz, respectively, allows to adjust the intrinsic stress of the thin silicon nitride
films, varying the ratio between the time intervals during which the two RF power supplies are active in one cycle during the deposition process.
In addition, silicon nitride films with high compactness and homogeneity, high resistivity, low porosity and conformally deposited on patterned
substrates have been obtained. The optimized DF-PECVD silicon nitride has been used as structural layer and protection layer of the CMUTs. (literal)
- Prodotto di
- Autore CNR
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