Transport properties of Nd1.2Ba1.8Cu3OZ ultrathin films by field-effect doping (Articolo in rivista)

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  • Transport properties of Nd1.2Ba1.8Cu3OZ ultrathin films by field-effect doping (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.70.214528 (literal)
Alternative label
  • Salluzzo, M. and Cassinese, A. and De Luca, G. M. and Gambardella, A. and Prigiobbo, A. and Vaglio, R. (2004)
    Transport properties of Nd1.2Ba1.8Cu3OZ ultrathin films by field-effect doping
    in Physical review. B, Condensed matter and materials physics; The American Physical Society, College Park, MD 20740-3844 (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Salluzzo, M. and Cassinese, A. and De Luca, G. M. and Gambardella, A. and Prigiobbo, A. and Vaglio, R. (literal)
Pagina inizio
  • 214528-1 (literal)
Pagina fine
  • 214528-6 (literal)
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  • http://link.aps.org/doi/10.1103/PhysRevB.70.214528 (literal)
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  • 70 (literal)
Rivista
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  • 6 (literal)
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  • 21 (literal)
Note
  • Google Scholar (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • M. Salluzzo, A. Cassinese, G. M. De Luca, A. Gambardella, A. Prigiobbo, and R. Vaglio INFM-COHERENTIA and Dipartimento di Scienze Fisiche, Università di Napoli \"Federico II\" Piazzale Tecchio 80, I-80125 Napoli, (literal)
Titolo
  • Transport properties of Nd1.2Ba1.8Cu3OZ ultrathin films by field-effect doping (literal)
Abstract
  • We report a study on the transport properties of ultrathin Nd1.2Ba1.8Cu3Oz (NdBCO) films by using field effect devices. Very high quality NdBCO films, having thickness ranging between 5 and 130 nm, have been prepared using diode high oxygen pressure sputtering. The temperature dependence of the resistivity has been studied as a function of the number of layers and of doping induced by field effect. An insulating-superconducting transition is observed in these films when the thickness is increased above 9 unit cells (u.c.). Below 9 u.c. the resistivity follows a 2D Mott variable range hopping temperature dependence and the localization length, estimated from a fit, is found to increase when holes are injected in the sample by field effect. A similar trend is observed when the number of layers in the film increases as a result of the changes of doping. The analysis suggests that hole density plays a major role in the transport properties of NdBCO ultrathin films. (literal)
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