http://www.cnr.it/ontology/cnr/individuo/prodotto/ID248512
Reliability and Retention Study of Nanocrystal Cell Array (Contributo in atti di convegno)
- Type
- Label
- Reliability and Retention Study of Nanocrystal Cell Array (Contributo in atti di convegno) (literal)
- Anno
- 2002-01-01T00:00:00+01:00 (literal)
- Alternative label
Gerardi C, Ammendola G, Melanotte M, Lombardo S, Crupi I (2002)
Reliability and Retention Study of Nanocrystal Cell Array
in European Solid-State Device Research Conference, 24-26 September 2002
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Gerardi C, Ammendola G, Melanotte M, Lombardo S, Crupi I (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
- Proceeding of the 32nd European Solid-State Device Research Conference (literal)
- Note
- EEE Xplore digital library (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Central R&D, STMicroelectronics, Stradale Primosole 50, 95121 Catania, ITALY
CNR-IMM, Sezione di Catania, Stradale Primosole 50, 95121 Catania, ITALY (literal)
- Titolo
- Reliability and Retention Study of Nanocrystal Cell Array (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
- Abstract
- We have studied nanocrystal memory arrays with
2.56 × 105 cells (256kb) in which Si nanocrystals have
been obtained by CVD deposition on a 4nm tunnel
oxide. The cells in the array are programmed and
erased by electron tunneling through the SiO2
dielectric. We find that the threshold voltage
distribution has little spread. In addition the arrays are
also very robust with respect to drain stress and show
good retention. (literal)
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