Reliability and Retention Study of Nanocrystal Cell Array (Contributo in atti di convegno)

Type
Label
  • Reliability and Retention Study of Nanocrystal Cell Array (Contributo in atti di convegno) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Alternative label
  • Gerardi C, Ammendola G, Melanotte M, Lombardo S, Crupi I (2002)
    Reliability and Retention Study of Nanocrystal Cell Array
    in European Solid-State Device Research Conference, 24-26 September 2002
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Gerardi C, Ammendola G, Melanotte M, Lombardo S, Crupi I (literal)
Pagina inizio
  • 475 (literal)
Pagina fine
  • 478 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • Proceeding of the 32nd European Solid-State Device Research Conference (literal)
Note
  • EEE Xplore digital library (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Central R&D, STMicroelectronics, Stradale Primosole 50, 95121 Catania, ITALY CNR-IMM, Sezione di Catania, Stradale Primosole 50, 95121 Catania, ITALY (literal)
Titolo
  • Reliability and Retention Study of Nanocrystal Cell Array (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 88-900847-8-2 (literal)
Abstract
  • We have studied nanocrystal memory arrays with 2.56 × 105 cells (256kb) in which Si nanocrystals have been obtained by CVD deposition on a 4nm tunnel oxide. The cells in the array are programmed and erased by electron tunneling through the SiO2 dielectric. We find that the threshold voltage distribution has little spread. In addition the arrays are also very robust with respect to drain stress and show good retention. (literal)
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