http://www.cnr.it/ontology/cnr/individuo/prodotto/ID248510
Distribution of the threshold voltage window in nanocrystal memories with Si dots formed by chemical vapor deposition: Effect of partial self-ordering (Contributo in atti di convegno)
- Type
- Label
- Distribution of the threshold voltage window in nanocrystal memories with Si dots formed by chemical vapor deposition: Effect of partial self-ordering (Contributo in atti di convegno) (literal)
- Anno
- 2004-01-01T00:00:00+01:00 (literal)
- Alternative label
Lombardo S, Puglisi RA, Crupi I, Corso D, Nicotra G, Perniola L, DeSalvo B, Gerardi C (2004)
Distribution of the threshold voltage window in nanocrystal memories with Si dots formed by chemical vapor deposition: Effect of partial self-ordering
in Non Volatile Semiconductor Memory Workshop
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Lombardo S, Puglisi RA, Crupi I, Corso D, Nicotra G, Perniola L, DeSalvo B, Gerardi C (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR, IMM, Sez Catania, I-95121 Catania, Italy
ST Microelect, I-95121 Catania, Italy (literal)
- Titolo
- Distribution of the threshold voltage window in nanocrystal memories with Si dots formed by chemical vapor deposition: Effect of partial self-ordering (literal)
- Prodotto di
- Autore CNR
Incoming links:
- Autore CNR di
- Prodotto