Distribution of the threshold voltage window in nanocrystal memories with Si dots formed by chemical vapor deposition: Effect of partial self-ordering (Contributo in atti di convegno)

Type
Label
  • Distribution of the threshold voltage window in nanocrystal memories with Si dots formed by chemical vapor deposition: Effect of partial self-ordering (Contributo in atti di convegno) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Alternative label
  • Lombardo S, Puglisi RA, Crupi I, Corso D, Nicotra G, Perniola L, DeSalvo B, Gerardi C (2004)
    Distribution of the threshold voltage window in nanocrystal memories with Si dots formed by chemical vapor deposition: Effect of partial self-ordering
    in Non Volatile Semiconductor Memory Workshop
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Lombardo S, Puglisi RA, Crupi I, Corso D, Nicotra G, Perniola L, DeSalvo B, Gerardi C (literal)
Pagina inizio
  • 69 (literal)
Pagina fine
  • 70 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Sez Catania, I-95121 Catania, Italy ST Microelect, I-95121 Catania, Italy (literal)
Titolo
  • Distribution of the threshold voltage window in nanocrystal memories with Si dots formed by chemical vapor deposition: Effect of partial self-ordering (literal)
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Autore CNR

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