Improving floating-gate memory reliability by nanocrystal storage and pulsed tunnel programming (Articolo in rivista)

Type
Label
  • Improving floating-gate memory reliability by nanocrystal storage and pulsed tunnel programming (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Alternative label
  • G. Puzzilli, D. Caputo, F. Irrera, C. Monzio Compagnoni, D. Ielmini, A. S. Spinelli, A. L. Lacaita and C. Gerardi (2004)
    Improving floating-gate memory reliability by nanocrystal storage and pulsed tunnel programming
    in IEEE transactions on device and materials reliability
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • G. Puzzilli, D. Caputo, F. Irrera, C. Monzio Compagnoni, D. Ielmini, A. S. Spinelli, A. L. Lacaita and C. Gerardi (literal)
Pagina inizio
  • 390 (literal)
Pagina fine
  • 396 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 4 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • Improving floating-gate memory reliability by nanocrystal storage and pulsed tunnel programming (literal)
Prodotto di
Autore CNR

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