Initial stages of cobalt disilicide formation on silicon single crystals (Articolo in rivista)

Type
Label
  • Initial stages of cobalt disilicide formation on silicon single crystals (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Alternative label
  • M.V. Gomoyunova, I.I. Pronin, D.A. Valdaitsev, N.S. Faradzhev, P. Luches, A. Rota, S. Valeri (2002)
    Initial stages of cobalt disilicide formation on silicon single crystals
    in Physics of low-Dimensional structures
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M.V. Gomoyunova, I.I. Pronin, D.A. Valdaitsev, N.S. Faradzhev, P. Luches, A. Rota, S. Valeri (literal)
Pagina inizio
  • 163 (literal)
Pagina fine
  • 176 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 3-4 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 14 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Russian Academy of Science, AF Ioffe Phys. Tech. Inst., Politekhnicheskaya 26, St Petersburg 194021, Russia INFM, Unità di Modena, I-41100 Modena, Italy Università di Modena, Dipartimento di Fisica, I-41100 Modena, Italy (literal)
Titolo
  • Initial stages of cobalt disilicide formation on silicon single crystals (literal)
Abstract
  • The initial stages of cobalt disilicide formation on Si(111) and Si(100) surfaces are studied using backscattered electron imaging of the nearsurface atomic structure. Both reactive deposition and solid phase epitaxy are investigated in the coverage range of 1-10 ML of Co. The evidence for CoSi2 island formation at the earliest stages of the process is found. The epitaxial orientations of disilicide layers grown on Si(111) and Si(100) surfaces are determined. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it