Structure and growth mode of thin Co films on Fe(001): comparison of purely thermal and ion-assisted deposition (Articolo in rivista)

Type
Label
  • Structure and growth mode of thin Co films on Fe(001): comparison of purely thermal and ion-assisted deposition (Articolo in rivista) (literal)
Anno
  • 2001-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/S0040-6090(01)01415-8 (literal)
Alternative label
  • C. Giovanardi, P. Luches, A. di Bona, A. Borghi and S. Valeri (2001)
    Structure and growth mode of thin Co films on Fe(001): comparison of purely thermal and ion-assisted deposition
    in Thin solid films (Print); ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • C. Giovanardi, P. Luches, A. di Bona, A. Borghi and S. Valeri (literal)
Pagina inizio
  • 116 (literal)
Pagina fine
  • 124 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0040609001014158 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 397 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 9 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1-2 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Istituto Nazionale per la Fisica della Materia, via Campi 213/a, I-41100 Modena, Italy Dipartimento di Fisica, Università di Modena e Reggio Emilia, via Campi 213/a, I-41100 Modena, Italy (literal)
Titolo
  • Structure and growth mode of thin Co films on Fe(001): comparison of purely thermal and ion-assisted deposition (literal)
Abstract
  • The growth of epitaxial Co layers on Fe(001) by simultaneous thermal evaporation of Co atoms and ion bombardment with low-energy (300-1000 eV) Ar ions has been investigated for a wide range of ion/atom flux ratios (up to 0.5) and compared with growth by a purely thermal deposition procedure. Co nominal thickness was in the 2-50 monolayer (ML) range. At low Co nominal thickness (2-10 monolayers), the thermally grown films tend to form islands, while the ion beam-assisted growth results in the formation of a continuous Co layer. Structural characterisation of the Co layer was performed by exploiting the dependence of the Auger emission intensity on the angle of incidence of the primary exciting electron beam (primary-beam diffraction modulated electron emission, PDMEE). For purely thermal deposition, transition from the cubic phase to the equilibrium h.c.p. phase occurs at a critical nominal thickness of 15 ML, both structures showing a significant strain (4% contraction and 6% expansion compared to the ideal b.c.c. and h.c.p. phases, respectively). Ion assistance has proved to be effective in lowering both the critical thickness of the cubic phase and strain in the hexagonal Co film. The relevant parameter which comes into play in determining the effectiveness of ion assistance has been found to be the average energy deposited per atom. (C) 2001 Elsevier Science B.V. All rights reserved. (literal)
Editore
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Editore di
Insieme di parole chiave di
data.CNR.it