Imaging of the structure of ultra-thin cobalt silicide films by inelastically backscattered electrons (Articolo in rivista)

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Label
  • Imaging of the structure of ultra-thin cobalt silicide films by inelastically backscattered electrons (Articolo in rivista) (literal)
Anno
  • 2001-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/S0169-4332(01)00064-2 (literal)
Alternative label
  • I.I. Pronin, D.A. Valdaitsev, N.S. Faradzhev, M.V. Gomoyunova, P. Luches and S. Valeri (2001)
    Imaging of the structure of ultra-thin cobalt silicide films by inelastically backscattered electrons
    in Applied surface science; ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • I.I. Pronin, D.A. Valdaitsev, N.S. Faradzhev, M.V. Gomoyunova, P. Luches and S. Valeri (literal)
Pagina inizio
  • 83 (literal)
Pagina fine
  • 89 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0169433201000642 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 175-176 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 7 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia INFM, Unità di Modena, Università di Modena, via G. Campi 213/A, 41100 Modena, Italy Dipartimento di Fisica, Università di Modena, via G. Campi 213/A, 41100 Modena, Italy (literal)
Titolo
  • Imaging of the structure of ultra-thin cobalt silicide films by inelastically backscattered electrons (literal)
Abstract
  • We have investigated the initial growth of cobalt silicide films in the Co/Si(1 1 1) system by incoherent medium-energy electron diffraction providing real-space imaging of the subsurface atomic structure. It is shown that deposition of the first few (1-3) monolayers of Co results in formation of cobalt silicide islands with composition and structure depending on the temperature. While, the clusters of B-type CoSi2 grow at elevated temperatures (T > 300 degreesC), the room temperature deposits consist of silicide grains of A- and B-type orientation. Further increase of the Co coverage results in both an enrichment of the probed layer with the metal and its disordering. Annealing of such samples at T > 250 degreesC gives rise to solid-phase reaction of Co and Si leading to gradual formation of the epitaxial disilicide layer and disappearance of A-type domains. (literal)
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