http://www.cnr.it/ontology/cnr/individuo/prodotto/ID24764
Switching and programming dynamics in phase-change memory cells (Articolo in rivista)
- Type
- Label
- Switching and programming dynamics in phase-change memory cells (Articolo in rivista) (literal)
- Anno
- 2005-01-01T00:00:00+01:00 (literal)
- Alternative label
D. Ielmini, D. Mantegazza, A.L. Lacaita, A. Pirovano, F. Pellizzer (2005)
Switching and programming dynamics in phase-change memory cells
in Solid-state electronics
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- D. Ielmini, D. Mantegazza, A.L. Lacaita, A. Pirovano, F. Pellizzer (literal)
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- Rivista
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- ISI Web of Science (WOS) (literal)
- Titolo
- Switching and programming dynamics in phase-change memory cells (literal)
- Abstract
- Emerging phase-change memory (PCM) technology for non-volatile applications presents many potential advantages in terms of scalability, endurance and program/read speed. While several integration issues have still to be solved before achieving volume-production stage, the fundamental physics of chalcogenide switching and phase-change behaviour has still to be comprehensively understood. This paper provides an in-depth analysis of the switching and programming transient in PCM cells. It is shown that the cell parasitic capacitance can lead to a marked current overshoot in the programming transient. As evidenced by experiments, this overshoot is able to melt and quench the active material as in a reset operation. The parasitic reset results in a series distribution of crystalline and amorphous phases after program. The analysis of array cell capacitance instead indicates that no parasitic reset is to be expected, allowing for a localized crystallization during program, as previously obtained by numerical simulations. (literal)
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