Measurements of near infrared frequency mixing by metal-semiconductor point-contact diodes (Articolo in rivista)

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Label
  • Measurements of near infrared frequency mixing by metal-semiconductor point-contact diodes (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Alternative label
  • E. Bava, N. Beverini, G. Carelli, A. De Michele, G. Galzerano, E. Maccioni, A. Moretti, F. Sorrentino, and C. Svelto (2005)
    Measurements of near infrared frequency mixing by metal-semiconductor point-contact diodes
    in IEEE transactions on instrumentation and measurement
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • E. Bava, N. Beverini, G. Carelli, A. De Michele, G. Galzerano, E. Maccioni, A. Moretti, F. Sorrentino, and C. Svelto (literal)
Pagina inizio
  • 1407 (literal)
Pagina fine
  • 1411 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 54 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • Measurements of near infrared frequency mixing by metal-semiconductor point-contact diodes (literal)
Abstract
  • The performances of metal–semiconductor pointcontact diodes as mixers in the near-infrared region were tested. Preliminary experiments were performed in order to phase-lock two diode lasers at 850 nm a few hundred gigahertz apart. GaSb, InAs, and InSb as semiconductor layers were used. The frequency bridge between the two lasers was covered by a Gunn diode frequency locked to a 1-GHz oscillator. A novel phase-lock circuit was tested on two diode lasers 72 GHz apart. (literal)
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