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Measurements of near infrared frequency mixing by metal-semiconductor point-contact diodes (Articolo in rivista)
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- Label
- Measurements of near infrared frequency mixing by metal-semiconductor point-contact diodes (Articolo in rivista) (literal)
- Anno
- 2005-01-01T00:00:00+01:00 (literal)
- Alternative label
E. Bava, N. Beverini, G. Carelli, A. De Michele, G. Galzerano, E. Maccioni, A. Moretti, F. Sorrentino, and C. Svelto (2005)
Measurements of near infrared frequency mixing by metal-semiconductor point-contact diodes
in IEEE transactions on instrumentation and measurement
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- E. Bava, N. Beverini, G. Carelli, A. De Michele, G. Galzerano, E. Maccioni, A. Moretti, F. Sorrentino, and C. Svelto (literal)
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- ISI Web of Science (WOS) (literal)
- Titolo
- Measurements of near infrared frequency mixing by metal-semiconductor point-contact diodes (literal)
- Abstract
- The performances of metalsemiconductor pointcontact diodes as mixers in the near-infrared region were tested. Preliminary experiments were performed in order to phase-lock two diode lasers at 850 nm a few hundred gigahertz apart. GaSb, InAs, and InSb as semiconductor layers were used. The frequency bridge between the two lasers was covered by a Gunn diode frequency locked to a 1-GHz oscillator. A novel phase-lock circuit was tested on two diode lasers 72 GHz apart. (literal)
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