http://www.cnr.it/ontology/cnr/individuo/prodotto/ID24704
Stable p-channel polysilicon TFTs fabricated by laser doping technique (Articolo in rivista)
- Type
- Label
- Stable p-channel polysilicon TFTs fabricated by laser doping technique (Articolo in rivista) (literal)
- Anno
- 2005-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.tsf.2005.01.071 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- A. Di Gaspare; L. Mariucci; A. Pecora; G. Fortunato (literal)
- Pagina inizio
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Titolo
- Stable p-channel polysilicon TFTs fabricated by laser doping technique (literal)
- Abstract
- In this work we present the electrical characterization of non self-aligned p-channel thin film transistors fabricated by using laser
doping technique for source/drain contact formation and gate oxide deposited at room temperature by Electron Cyclotron Resonance
Plasma Enhanced Chemical Vapour Deposition. These techniques are suitable for a very low temperature process for TFT fabrication. The
output characteristics show a current increase at high drain voltage, (bkinkQ effect) rather moderate, if compared to self aligned polysilicon
TFTs, probably due to the gradual doping profile induced by laser doping process. After bias stress at low gate voltage and high drain
voltage condition a strong reduction of kink current has been observed in the output characteristics at high drain voltage, whereas minor
changes has been observed in the transfer characteristics. This behaviour is similar to what observed in n-channel Gate Overlapped Thin
Film Transistors. In the high gate voltage and high drain voltage bias-stress condition we observed only a rigid shift of the transfer
characteristics probably related to charge injection in the gate oxide, while subthreshold slope remains constant. (literal)
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