Silicon dioxide deposite d by ECR-PECVD for low-temperature Si devices (Articolo in rivista)

Type
Label
  • Silicon dioxide deposite d by ECR-PECVD for low-temperature Si devices (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.microrel.2004.09.012 (literal)
Alternative label
  • A. Pecora; L. Maiolo; A. Bonfiglietti; M. Cuscunà; F. Mecarini; L. Mariucci; G. Fortunato; N. D. Young (2005)
    Silicon dioxide deposite d by ECR-PECVD for low-temperature Si devices
    in Microelectronics and reliability
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • A. Pecora; L. Maiolo; A. Bonfiglietti; M. Cuscunà; F. Mecarini; L. Mariucci; G. Fortunato; N. D. Young (literal)
Pagina inizio
  • 879 (literal)
Pagina fine
  • 882 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 45 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 5-6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Instituto di Fotonica e Nanotecnologie (IFN), CNR, Via Cineto Romano 42, 00156 Rome, Italy (literal)
Titolo
  • Silicon dioxide deposite d by ECR-PECVD for low-temperature Si devices (literal)
Abstract
  • Silicon dioxide films have been deposited at temperatures less than 270 degrees C in an electron cyclotron resonance (ECR) plasma reactor from a gas phase combination of O-2, SiH4 and He. The physical characterization of the material was carried out through pinhole density analysis as a function of substrate temperature for different mu-wave power (E-w). Higher E-w at room deposition temperature (RT) shows low defects densities (< 7 pinhole/mm(2)) ensuring low-temperatures process integration on large area. From FTIR analysis and Thermal Desorption Spectroscopy we also evaluated very low hydrogen content if compared to conventional rf-PECVD SiO2 deposited at 350 degrees C. Electrical properties have been measured in MOS devices, depositing SiO2 at RT. No significant charge injection up to fields 6-7 MV/cm and average breakdown electric field > 10 MV/cm are observed from ramps I-V. Moreover, from high frequency and quasi-static C-V characteristics we studied interface quality as function of annealing time and annealing temperature in N-2. We found that even for low annealing temperature (200 degrees C) is possible to reduce considerably the interface state density down to 5 x 10(11) cm(-2) eV(-1). These results show that a complete low-temperatures process can be achieved for the integration of SiO2 as gate insulator in polysilicon TFTs on plastic substrates. (literal)
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