Analysis of stress and composition of silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition for microfabrication processes (Articolo in rivista)

Type
Label
  • Analysis of stress and composition of silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition for microfabrication processes (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1116/1.1835316 (literal)
Alternative label
  • E. Cianci; F. Pirola; V. Foglietti (2005)
    Analysis of stress and composition of silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition for microfabrication processes
    in Journal of vacuum science & technology. B, Microelectronics and nanometer structures
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • E. Cianci; F. Pirola; V. Foglietti (literal)
Pagina inizio
  • 168 (literal)
Pagina fine
  • 172 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 23 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Istituto di Fotonica e Nanotecnologie IFN-CNR, Via Cineto Romano 42, 00156 Roma, Italy (literal)
Titolo
  • Analysis of stress and composition of silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition for microfabrication processes (literal)
Abstract
  • We investigated the influence of process parameters in electron cyclotron resonance plasma-enhanced chemical-vapor deposition (ECR-PECVD) of silicon nitride on the intrinsic stress of thin SiNx films and on their composition, to obtain SiNx films suitable for micromechanical applications. The silane-to-nitrogen gas flow ratio R, along with the addition of helium to the gas mixture, was found to be a critical parameter for the tuning of intrinsic stress in ECR-PECVD SiNx films, from compressive to tensile stress within a large window of R from 0.3 to 0.7, with a maximum related to the largest Si-N bond density in the film. (literal)
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