Comparison between chemical and electrical profiles in Al+ or N+ implanted and annealed 6H-SiC (Articolo in rivista)

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  • Comparison between chemical and electrical profiles in Al+ or N+ implanted and annealed 6H-SiC (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.4028/www.scientific.net/MSF.389-393.811 (literal)
Alternative label
  • Nipoti, R and Carnera, A and Raineri, V (2002)
    Comparison between chemical and electrical profiles in Al+ or N+ implanted and annealed 6H-SiC
    in Materials science forum; TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH (Svizzera)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Nipoti, R and Carnera, A and Raineri, V (literal)
Pagina inizio
  • 811 (literal)
Pagina fine
  • 814 (literal)
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  • Congresso data OCT 28-NOV 02, 2001 Congresso luogo TSUKUBA, JAPAN Congresso nome International Conference on Silicon Carbide and Related Materials Congresso relazione Contributo Congresso rilevanza Internazionale Curatore/i del volume S. Yoshida, S. Nishino, H. Harima and T. Kimoto ISBN 0-87849-894-X Titolo del volume SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.scientific.net/MSF.389-393.811 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 389-393 (literal)
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  • 389-393 (literal)
Rivista
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  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Nipoti, R (Reprint Author), CNR, Ist Lamel, Via P Gobetti 101, IT-40129 Bologna, Italy. CNR, Ist Lamel, IT-40129 Bologna, Italy. Univ Padua, Dipartimento Fis, IT-35131 Padua, Italy. Univ Padua, INFM, IT-35131 Padua, Italy. CNR, Ist IMETEM, IT-95121 Catania, Italy. (literal)
Titolo
  • Comparison between chemical and electrical profiles in Al+ or N+ implanted and annealed 6H-SiC (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 0-87849-894-X (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • S. Yoshida, S. Nishino, H. Harima and T. Kimoto (literal)
Abstract
  • Deep ion implanted p-n junctions in 6H-SiC were characterised by secondary ion (SIMS) and scanning capacitance microscopy (SCM) techniques. On-axis and off-axis 6H-SiC wafers were used. Al and N box-shaped profiles were implanted, respectively, in n- an p-type wafers. These profiles were about 1-1.5 mum thick and 4 x 10(19) cm(-3) height. Ion energy and fluence values in the ranges, respectively, 330 keV - 2.2 MeV and 7 x 10(13) cm(-2) - 1.3 x 10(15) cm(-2), were used. The implantation temperature was 305degreesC. Annealing processes were done in an inductively heated furnace at 1650degreesC for 30 min. Cross section SCM line-scans were compared with SIMS profiles. Agreement between profile shapes was found. (literal)
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