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Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs (Contributo in atti di convegno)

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Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs (Contributo in atti di convegno) (literal)

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Moscatelli, F. and Poggi, A. and Solmi, S. and Nipoti, R. and Armigliato, A. and Belsito, L. (2010)
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs
in 13th International Conference on Silicon Carbide and Related Materials,, Nurnberg, GERMANY, OCT 11-16, 2009
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Moscatelli, F. and Poggi, A. and Solmi, S. and Nipoti, R. and Armigliato, A. and Belsito, L. (literal)

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Moscatelli, F (Reprint Author), IMM Bologna, CNR, Via Gobetti 101, I-40129 Bologna, Italy. Moscatelli, F.; Poggi, A.; Solmi, S.; Nipoti, R.; Armigliato, A.; Belsito, L., IMM Bologna, CNR, I-40129 Bologna, Italy. (literal)

Titolo

Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs (literal)

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Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller (literal)

Abstract

In this paper the electrical and structural characteristics of n-MOSFETs fabricated on 4H-SiC with a process based on nitrogen (N) implantation in the channel region before the growth of the gate oxide are reported for low (5x10(18) cm(-3)) and high (6x10(19) cm(-3)) N concentration at the SiO(2)/SiC interface. The electron mobility and the free carrier concentration in the MOSFET channel were evaluated by Hall effect measurement. The MOSFETs with the higher N concentration had the best electrical characteristics in terms of threshold voltage and field effect mobility, in spite of a lowering of the electron mobility in the channel. The latter is a negative drawback of the fabrication process that probably can be ascribed to an incomplete recovery of the implantation damage or to a high density of interstitial N atoms present in the channel region. In fact, the MOSFETs with the superior electrical performances were fabricated with the higher N(+) dose and the shorter thermal oxidation time. However, no evidence of extended defects, clusters or nano-particles in SiC at the interface with the gate oxide was found in every SiC MOSFETs devices observed by electron transmission microscopy. (literal)

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