Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability (Contributo in atti di convegno) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1557/PROC-1246-B09-01 (literal)

Alternative label

• Poggi, A. and Moscatelli, F. and Solmi, S. and Nipoti, R. (2010)
  Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability
  in 2010 MRS Spring Meeting - Symposium B - Silicon Carbide 2010-Materials, Processing and Devices, San Francisco, CA, APR 05-09, 2010
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Poggi, A. and Moscatelli, F. and Solmi, S. and Nipoti, R. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• SILICON CARBIDE 2010-MATERIALS, PROCESSING AND DEVICES (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 1246 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Poggi, A (Reprint Author), CNR IMM Dept Bologna, Via Gobetti 101, I-40129 Bologna, Italy. Poggi, A.; Moscatelli, F.; Solmi, S.; Nipoti, R., CNR IMM Dept Bologna, I-40129 Bologna, Italy. (literal)

Titolo

• Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 978-1-60511-223-7 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume

• S.E. Saddow, E. Sanchez, F. Zhao, M. Dudley (literal)

Abstract

• This study compares p-MOS capacitors fabricated on N+ implanted and on virgin 4H-SiC. The former sample have N at the SiO2/SiC interface, the latter have not. To investigate the presence of deep and shallow hole traps at the SiO2/SiC interface, high frequency and quasi-static capacitance voltage measurements under dark have been compared for bias sweeping from accumulation to depletion and from depletion to accumulation, the latter after white light illumination. The presence of N has an effect on the density of the shallow donor like traps but no effect on the deep ones. The positive charge trapped in the oxide and/or at the oxide interface after equivalent tunneling hole injection have been compared and are equivalent. Time dependent dielectric breakdown tests have been compared too. The oxide grown on N+ implanted SiC broken at lower electric field. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• SANDRO SOLMI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• ANTONELLA POGGI (Unità di personale interno)
• FRANCESCO MOSCATELLI (Unità di personale esterno)

Insieme di parole chiave

• Keywords of "Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• SANDRO SOLMI (Unità di personale interno)
• ANTONELLA POGGI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• FRANCESCO MOSCATELLI (Unità di personale esterno)

Insieme di parole chiave di

• Keywords of "Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability" (Insieme di parole chiave)