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Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer (Contributo in atti di convegno)

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Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer (Contributo in atti di convegno) (literal)

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Pintilie, I. and Moscatelli, F. and Nipoti, R. and Poggi, A. and Solmi, S. and Svensson, B. G. (2009)
Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer
in 7th European Conference on Silicon Carbide and Related Materials, Barcelona, SPAIN, SEP 07-11, 2008
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Pintilie, I. and Moscatelli, F. and Nipoti, R. and Poggi, A. and Solmi, S. and Svensson, B. G. (literal)

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Pintilie, I (Reprint Author), Natl Inst Mat Phys, POB MG-7, Bucharest, Romania. Pintilie, I., Natl Inst Mat Phys, Bucharest, Romania. Pintilie, I.; Moscatelli, F.; Nipoti, R.; Poggi, A.; Solmi, S., CNR IMM Bologna, I-40129 Bologna, Italy. Pintilie, I.; Svensson, B. G., Univ Oslo, Dept Phys, Ctr Mat Sci & Nanotechnol, N-0316 Oslo, Norway. (literal)

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Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer (literal)

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Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard (literal)

Abstract

This work is focusing oil the effect of a high concentration of nitrogen (N) introduced by ion implantation at the SiO(2)/4H-SiC interface in MOS capacitors. The N implanted sample (N(interface) similar to 1 x 10(19) cm(-3)) is compared with a non-implanted one (N(interface) similar to 1 x 10(16) cm(-3)) by means of the electron interface trap density (D(it)). The Dit is determined via High-Low frequency C-V method and Thermal Dielectric Relaxation Current (TDRC) technique. It is shown that the TDRC method, mainly used so far for determination of near interface oxide charges, call be exploited to gain information about the D(it) too. The determined value of D(it) in the N-implanted sample is nearly one order of magnitude lower than that in the sample without N implantation. Good agreement between the TDRC results and those obtained from High-Low frequency C-V measurements is obtained. Furthermore, the TDRC method shows a high accuracy and resolution of D(it),evaluation in the region close to the majority carrier band edge and gives information about the traps located into the oxide. (literal)

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