Ion Implanted p(+)/n diodes: post-implantation annealing in a silane ambient in a cold-wall low-pressure CVD reactor (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Ion Implanted p(+)/n diodes: post-implantation annealing in a silane ambient in a cold-wall low-pressure CVD reactor (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.4028/www.scientific.net/MSF.527-529.819 (literal)

Alternative label

• Bergamini, Fabio and Rao, Shailaja P. and Poggi, Antonella and Tamarri, Fabrizio and Saddow, Stephen E. and Nipoti, Roberta (2006)
  Ion Implanted p(+)/n diodes: post-implantation annealing in a silane ambient in a cold-wall low-pressure CVD reactor
  in Materials science forum; TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH (Svizzera)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Bergamini, Fabio and Rao, Shailaja P. and Poggi, Antonella and Tamarri, Fabrizio and Saddow, Stephen E. and Nipoti, Roberta (literal)

Pagina inizio

• 819 (literal)

Pagina fine

• 822 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

• Congresso data SEP 18-23, 2005 Congresso luogo Pittsburgh, PA Congresso nome International Conference on Silicon Carbide and Related Materials (ICSCRM 2005) Congresso relazione Contributo Congresso rilevanza Internazionale Curatore/i del volume Robert P. Devaty, David J. Larkin and Stephen E. Saddow Titolo del volume Silicon Carbide and Related Materials 2005, Pts 1 and 2 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.scientific.net/MSF.527-529.819 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• Silicon Carbide and Related Materials 2005, Pts 1 and 2 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 527-529 (literal)

Rivista

• Materials science forum (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Bergamini, F (Reprint Author), CNR, IMM, Sez Bologna, Via Gobetti 101, I-40129 Bologna, Italy. CNR, IMM, Sez Bologna, I-40129 Bologna, Italy. Univ S Florida, Dept Elect Engn, Tampa, FL 33620 USA. (literal)

Titolo

• Ion Implanted p(+)/n diodes: post-implantation annealing in a silane ambient in a cold-wall low-pressure CVD reactor (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume

• Robert P. Devaty, David J. Larkin and Stephen E. Saddow (literal)

Abstract

• This work reports the realization and characterization of 4H-SiC p(+)/n diodes with the p(+) anodes made by Al+ ion implantation at 400 degrees C and post-implantation annealing in silane ambient in a cold-wall low-pressure CVD reactor. The Al depth profile was almost box shaped with a height of 6x10(19) cm(-3) and a depth of 160 nm. Implant anneals were performed in the temperature range from 1600 degrees C to 1700 degrees C. As the annealing temperature was increased, the silane flow rate was also increased. This annealing process yields a smooth surface with a roughness of the implanted area of 1.7 - 5.3 nm with increasing annealing temperature. The resistivity of the implanted layer, measured at room temperature, decreased for increasing annealing temperatures with a minimum value of 1.4 Omega-cm measured for the sample annealed at 1700 degrees C. Considering only the current-voltage characteristic of a diode that could be modeled as an abrupt p/n junction within the frame of the Shockley theory, the diode process yield and the diode leakage current decreased respectively, from 93% to 47% and from 2x10(-7) Acm(-2) to 1 x 10(-8) Acm(-2) at 100 V reverse bias, or increasing post implantation annealing temperature. (literal)

Editore

• TRANS TECH PUBLICATIONS LTD (Editore)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FABIO BERGAMINI (Unità di personale esterno)
• FABRIZIO TAMARRI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• ANTONELLA POGGI (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Ion Implanted p(+)/n diodes: post-implantation annealing in a silane ambient in a cold-wall low-pressure CVD reactor" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ANTONELLA POGGI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• FABRIZIO TAMARRI (Unità di personale interno)
• FABIO BERGAMINI (Unità di personale esterno)

Editore di

• TRANS TECH PUBLICATIONS LTD (Editore)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science forum (Rivista)

Insieme di parole chiave di

• Keywords of "Ion Implanted p(+)/n diodes: post-implantation annealing in a silane ambient in a cold-wall low-pressure CVD reactor" (Insieme di parole chiave)