SiC Synthesis by fullerence free jets on Si(111) at low temperatures (Articolo in rivista)

Type
Label
  • SiC Synthesis by fullerence free jets on Si(111) at low temperatures (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.4028/www.scientific.net/MSF.433-436.237 (literal)
Alternative label
  • Aversa L.; Verucchi R.; Pedio M.; Iannotta S. (2003)
    SiC Synthesis by fullerence free jets on Si(111) at low temperatures
    in Materials science forum; Trans Tech Publications Ltd., Stafa-Zurich (Swaziland)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Aversa L.; Verucchi R.; Pedio M.; Iannotta S. (literal)
Pagina inizio
  • 237 (literal)
Pagina fine
  • 240 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Conference: 4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM 2002) Location: LINKOPING, SWEDEN Date: SEP 02-25, 2002 Sponsor(s): European Commiss, High Level Sci Conf; Swedish Res Council; Swedish Agcy Innovat Syst; Swedish Fdn Strateg Res; City Linkoping; Linkopings Univ; Embassy Italy Sweden; US Off Naval Res Int Field Off; ABB; CREE; Epigress; SiCrystal; Okmetic (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 433-436 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] CNR, IFN, Sec Trento Inst Photon & Nanotechnol, IT-38050 Povo, Italy [ 2 ] TASC, INFM, IT-34012 Basovizza, Trieste, Italy (literal)
Titolo
  • SiC Synthesis by fullerence free jets on Si(111) at low temperatures (literal)
Abstract
  • We have developed a new technique for SiC heteroepitaxy on Si by means of supersonic free jets of C60. The carbide synthesis can be achieved by the kinetic activation of the process. The electronic and structural properties of the film can be controlled by monitoring the beam parameters (flux and particle energy). SiC films were grown in Ultra High Vacuum on Si(111)7x7, at substrates temperatures of 800°C and 750°C, using two supersonic beams of C60 characterized by a particle energy of 5eV and 20eV. Surface electronic and structural characterisations were done both in-situ and the structural properties improved. (literal)
Editore
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Editore di
Insieme di parole chiave di
data.CNR.it