Valley spin polarization by using the extraordinary Rashba effect on silicon (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Valley spin polarization by using the extraordinary Rashba effect on silicon (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1038/ncomms3073 (literal)

Alternative label

• Kazuyuki Sakamoto, Tae-Hwan Kim, Takuya Kuzumaki, Beate Müller, Yuta Yamamoto, Minoru Ohtaka, Jacek R. Osiecki, Koji Miyamoto, Yasuo Takeichi, Ayumi Harasawa, Sebastian D. Stolwijk, Anke B. Schmidt, Jun Fujii, R. I. G. Uhrberg, Markus Donath, Han Woong Yeom & Tatsuki Oda (2013)
  Valley spin polarization by using the extraordinary Rashba effect on silicon
  in Nature communications
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Kazuyuki Sakamoto, Tae-Hwan Kim, Takuya Kuzumaki, Beate Müller, Yuta Yamamoto, Minoru Ohtaka, Jacek R. Osiecki, Koji Miyamoto, Yasuo Takeichi, Ayumi Harasawa, Sebastian D. Stolwijk, Anke B. Schmidt, Jun Fujii, R. I. G. Uhrberg, Markus Donath, Han Woong Yeom & Tatsuki Oda (literal)

Pagina inizio

• 2073 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 4 (literal)

Rivista

• Nature communications (Rivista)

Note

• Google Scholar (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Department of Nanomaterials Science, Chiba University, Department of Physics and Center for Low Dimensional Electronic Symmetry, Pohang University of Science and Technology, Department of Physics, Chemistry and Biology, Linköping University, Hiroshima Synchrotron Radiation Centre, Hiroshima University, Institute for Solid State Physics, The University of Tokyo, Physikalisches Institut, Westfälische Wilhelms-Universität Münster, TASC Laboratory, IOM-CNR, Center for Artificial Low Dimensional Electronic Systems of the Institute for Basic Science and Department of Physics, Pohang University of Science and Technology, Institute of Science and Engineering, Kanazawa University (literal)

Titolo

• Valley spin polarization by using the extraordinary Rashba effect on silicon (literal)

Abstract

• The addition of the valley degree of freedom to a two-dimensional spin-polarized electronic system provides the opportunity to multiply the functionality of next-generation devices. So far, however, such devices have not been realized due to the difficulty to polarize the valleys, which is an indispensable step to activate this degree of freedom. Here we show the formation of 100% spin-polarized valleys by a simple and easy way using the Rashba effect on a system with C3 symmetry. This polarization, which is much higher than those in ordinary Rashba systems, results in the valleys acting as filters that can suppress the backscattering of spin-charge. The present system is formed on a silicon substrate, and therefore opens a new avenue towards the realization of silicon spintronic devices with high efficiency. (literal)

Prodotto di

• Correlazione elettronica in interfacce magnetiche nanostrutturate e sistemi self-assembled (interfacce molecole-metallo, metallo-metallo, etc..) (MD.P04.006.002) (Modulo)

Autore CNR

• JUN FUJII (Persona)

Incoming links:

Autore CNR di

• JUN FUJII (Persona)

Prodotto

• Correlazione elettronica in interfacce magnetiche nanostrutturate e sistemi self-assembled (interfacce molecole-metallo, metallo-metallo, etc..) (MD.P04.006.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nature communications (Rivista)