A new self consistent model for the analysis of hot-carrier induced degradation in lightly doped drain (LDD) and gate overlapped LDD polysilicon TFTS. (Articolo in rivista)

Type
Label
  • A new self consistent model for the analysis of hot-carrier induced degradation in lightly doped drain (LDD) and gate overlapped LDD polysilicon TFTS. (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Valletta A.; Mariucci L.; Pecora A.; Fortunato G.; Ayres J.R.; Brotherton S.D. (2003)
    A new self consistent model for the analysis of hot-carrier induced degradation in lightly doped drain (LDD) and gate overlapped LDD polysilicon TFTS.
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Valletta A.; Mariucci L.; Pecora A.; Fortunato G.; Ayres J.R.; Brotherton S.D. (literal)
Pagina inizio
  • 117 (literal)
Pagina fine
  • 122 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 427 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • A new self consistent model for the analysis of hot-carrier induced degradation in lightly doped drain (LDD) and gate overlapped LDD polysilicon TFTS. (literal)
Prodotto di
Autore CNR

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