Comparative analysis of advanced polysilicon thin-film transistor architectures for drain field relief. (Articolo in rivista)

Type
Label
  • Comparative analysis of advanced polysilicon thin-film transistor architectures for drain field relief. (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1117/12.473883 (literal)
Alternative label
  • Fortunato G.(1); Valletta A.(1); Bonfiglietti A.(1); Cuscunà M.(1); Gaucci P.(1); Mariucci L.(1); Pecora A.(1); Brotherton S.D.(2); Ayres J.R.(2) (2003)
    Comparative analysis of advanced polysilicon thin-film transistor architectures for drain field relief.
    in Proceedings of SPIE, the International Society for Optical Engineering
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Fortunato G.(1); Valletta A.(1); Bonfiglietti A.(1); Cuscunà M.(1); Gaucci P.(1); Mariucci L.(1); Pecora A.(1); Brotherton S.D.(2); Ayres J.R.(2) (literal)
Pagina inizio
  • 150 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 5004 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • relazione invitata, in Electronic Imaging 03 Santa Clara, California, USA, 2024 January 2003 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (1) CNR - IFN (2) PHILIPS (literal)
Titolo
  • Comparative analysis of advanced polysilicon thin-film transistor architectures for drain field relief. (literal)
Abstract
  • Two different drain field relief architectures, lightly doped drain (LDD) and gate overlapped LDD (GOLDD), for polysilicon TFT have been analyzed and compared to conventional self-aligned (SA) devices. The introduction of LDD regions improves off-current, kink effect and electrical stability if compared to SA devices. However, a parasitic resistance effect is also introduced, thus limiting the benefits of LDD structures. GOLDD architecture overcomes this drawback, but, more importantly, show improved off-current and kink effect and exceptionally high electrical stability. The experimental results have been explained by analyzing the electric field distributions, obtained by two-dimensional numerical simulations, while a new tool to explain hot-carrier induced modifications in polysilicon TFTs was developed. (literal)
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