Reversible shift of the transition temperature of manganites in planar field effect devices patterned by atomic force microscope (Articolo in rivista)

Type
Label
  • Reversible shift of the transition temperature of manganites in planar field effect devices patterned by atomic force microscope (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1629399 (literal)
Alternative label
  • I.Pallecchi, L.Pellegrino, E.Bellingeri, A.S.Siri, D.Marré (2003)
    Reversible shift of the transition temperature of manganites in planar field effect devices patterned by atomic force microscope
    in Applied physics letters (Online)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • I.Pallecchi, L.Pellegrino, E.Bellingeri, A.S.Siri, D.Marré (literal)
Pagina inizio
  • 4435 (literal)
Pagina fine
  • 4437 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 83 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • INFM-LAMIA, CNR-IMEM and Dipartimento di Fisica, Via Dodecaneso 33, 16146 Genova, Italy (literal)
Titolo
  • Reversible shift of the transition temperature of manganites in planar field effect devices patterned by atomic force microscope (literal)
Abstract
  • The reversible shift of the TMI of a manganite thin film was obtained by field effect. By taking advantage of the planar side gate geometry as well as of the high dielectric permittivity substrate, it was possible to observe a shift by 1.3 K of TMI, plus a change in resistance by as much as 20%, demonstrating a remarkable modulation capability of charge carrier density. (literal)
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