http://www.cnr.it/ontology/cnr/individuo/prodotto/ID245006
Submicrometric SrTiO3-d based devices realized by an atomic force microscope (Articolo in rivista)
- Type
- Label
- Submicrometric SrTiO3-d based devices realized by an atomic force microscope (Articolo in rivista) (literal)
- Anno
- 2003-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/S0038-1101(03)00196-5 (literal)
- Alternative label
L.Pellegrino, E.Bellingeri, I.Pallecchi, A.S.Siri, D.Marré (2003)
Submicrometric SrTiO3-d based devices realized by an atomic force microscope
in Solid-state electronics
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- L.Pellegrino, E.Bellingeri, I.Pallecchi, A.S.Siri, D.Marré (literal)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Note
- ISI Web of Science (WOS) (literal)
- Scopu (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- INFM-LAMIA, CNR-IMEM, Dipartimento di Fisica, via Dodecaneso 33, 16146 Genova, Italy (literal)
- Titolo
- Submicrometric SrTiO3-d based devices realized by an atomic force microscope (literal)
- Abstract
- SrTiO3 (STO) is one of the key compounds in the emerging field of oxide electronics. Because of the low carrier concentration needed to turn it into the conducting state (1018 e/cm3) and to its high bulk mobility (104 cm2/Vs @ 4.2 K), we consider STO suitable as functional conducting element in future oxide based devices. In this work we show how by applying a negative voltage to the conducting tip of an atomic force microscope it is possible to modify on sub-micron scale structural and electrical properties of conducting SrTiO3-? thin films grown on insulating LaAlO3 substrates, thus realizing sub-micrometric STO electrical circuits. After discussing the mechanisms of the process, we present the fabrication of a SrTiO3-? based side gate field effect transistor. (literal)
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