Submicrometric SrTiO3-d based devices realized by an atomic force microscope (Articolo in rivista)

Type
Label
  • Submicrometric SrTiO3-d based devices realized by an atomic force microscope (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/S0038-1101(03)00196-5 (literal)
Alternative label
  • L.Pellegrino, E.Bellingeri, I.Pallecchi, A.S.Siri, D.Marré (2003)
    Submicrometric SrTiO3-d based devices realized by an atomic force microscope
    in Solid-state electronics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • L.Pellegrino, E.Bellingeri, I.Pallecchi, A.S.Siri, D.Marré (literal)
Pagina inizio
  • 2193 (literal)
Pagina fine
  • 2198 (literal)
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  • 47 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 12 (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • INFM-LAMIA, CNR-IMEM, Dipartimento di Fisica, via Dodecaneso 33, 16146 Genova, Italy (literal)
Titolo
  • Submicrometric SrTiO3-d based devices realized by an atomic force microscope (literal)
Abstract
  • SrTiO3 (STO) is one of the key compounds in the emerging field of oxide electronics. Because of the low carrier concentration needed to turn it into the conducting state (1018 e/cm3) and to its high bulk mobility (104 cm2/Vs @ 4.2 K), we consider STO suitable as functional conducting element in future oxide based devices. In this work we show how by applying a negative voltage to the conducting tip of an atomic force microscope it is possible to modify on sub-micron scale structural and electrical properties of conducting SrTiO3-? thin films grown on insulating LaAlO3 substrates, thus realizing sub-micrometric STO electrical circuits. After discussing the mechanisms of the process, we present the fabrication of a SrTiO3-? based side gate field effect transistor. (literal)
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