Sic film growth on Si(111) by supersonic beams of C60 (Articolo in rivista)

Type
Label
  • Sic film growth on Si(111) by supersonic beams of C60 (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1140/epjb/e20020120 (literal)
Alternative label
  • Verucchi R., Aversa L., Ciullo G., Podesta A., Milani P., Iannotta S. (2002)
    Sic film growth on Si(111) by supersonic beams of C60
    in The European physical journal. B, Condensed matter physics (Print); Springer Verlag, New York NY (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Verucchi R., Aversa L., Ciullo G., Podesta A., Milani P., Iannotta S. (literal)
Pagina inizio
  • 509 (literal)
Pagina fine
  • 514 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://link.springer.com/content/pdf/10.1140/epjb/e20020120 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 26 (literal)
Rivista
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  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] CeFSA ITC, IFN CNR, Inst Photon & Nanotechnol, Sect Trento, I-38050 Povo, TN, Italy [ 2 ] Univ Milan, Dipartimento Fis, INFM, I-20133 Milan, Italy (literal)
Titolo
  • Sic film growth on Si(111) by supersonic beams of C60 (literal)
Abstract
  • The development of electronic devices based on Silicon Carbide (SiC) has been strongly limited by the difficulties in growing; high quality crystalline bulk materials and films. We have recently elaborated a new technique for the synthesis of SiC on clean Si substrates by means of supersonic beams of C-60: the electronic and structure I properties of the film can be controlled by monitoring the beam parameters, i.e. flux and particles energy and aggregation state. SiC films were grown in Ultra High Vacuum on Si(111)-7x7, at substrates temperatures of 800degreesC, using two different supersonic beams of C-60: He and H-2 have been used as seeding gases, leading to particles energy of 5 eV and 20 eV, respectively. Surface characterisation was done in situ by Auger and X-Ray photoelectron spectroscopy, as well as by low energy electron diffraction and ex situ by atomic force microscopy technique. SiC films exhibited good structural and electronic properties, with presence of defects different from the typical triangular voids. (literal)
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