Development of Capacitive RF MEMS Switches with TaN and Ta2O5 Thin Films (Contributo in atti di convegno)

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  • Development of Capacitive RF MEMS Switches with TaN and Ta2O5 Thin Films (Contributo in atti di convegno) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1117/12.886715 (literal)
Alternative label
  • Anna Persano, Fabio Quaranta, Adriano Cola, Giorgio De Angelis, Romolo Marcelli, and Pietro Siciliano (2011)
    Development of Capacitive RF MEMS Switches with TaN and Ta2O5 Thin Films
    in SPIE Conference on Smart Sensors, Actuators and MEMS, Conference EMT101, Prague, Czech Republic, 18-20 April 2011
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Anna Persano, Fabio Quaranta, Adriano Cola, Giorgio De Angelis, Romolo Marcelli, and Pietro Siciliano (literal)
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  • http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1271334 (literal)
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  • Conference on Smart Sensors, Actuators and MEMS, Conference EMT101, 18-20 April 2011 Prague Congress Ctr. , Prague Czech Republic (literal)
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  • 8066 (literal)
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  • 6 (literal)
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  • CNR-IMM Lecce CNR-IMM Roma (literal)
Titolo
  • Development of Capacitive RF MEMS Switches with TaN and Ta2O5 Thin Films (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-0-8194-8655-4 (literal)
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  • AA.VV. (literal)
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  • Ulrich Schmid; José Luis Sánchez-Rojas; Monika Leester-Schaedel (literal)
Abstract
  • We develop shunt capacitive RF MEMS switches in III-V technology making use of materials which can be alternative to the ones commonly used, in order to overcome some technological constraints concerning the RF MEMS reliability. Specifically, we evaluate the potential of tantalum nitride (TaN) and tantalum pentoxide (Ta2O5) to be used for the switches actuation pads and dielectric layers, respectively. To this scope, a compositional, structural and electrical characterization of TaN and Ta2O5 films as a function of the deposition parameters, such as the substrate temperature and the sputtering mixture composition, is performed. The realized switches show good actuation voltages, in the range 15- 20 V, an insertion loss better than -0.8 dB up to 30 GHz, and an isolation of ~ -40 dB at the resonant frequency. A comparison between the measured S-parameter values and the results of a circuit simulation is also presented and discussed, providing useful information on the operation of the fabricated switches. (literal)
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