Comparison of radiative and structural properties of 1.3 mu m InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties (Articolo in rivista)

Type
Label
  • Comparison of radiative and structural properties of 1.3 mu m InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1578182 (literal)
Alternative label
  • A. Passaseo, M. De Vittorio, M.T. Todaro, I. Tarantini, M. De Giorgi, R. Cingolani, A. Taurino, M. Catalano, A. Fiore, A. Markus, J.X. Chen, C. Paranthoen, U. Oesterle, M. Ilegems (2003)
    Comparison of radiative and structural properties of 1.3 mu m InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • A. Passaseo, M. De Vittorio, M.T. Todaro, I. Tarantini, M. De Giorgi, R. Cingolani, A. Taurino, M. Catalano, A. Fiore, A. Markus, J.X. Chen, C. Paranthoen, U. Oesterle, M. Ilegems (literal)
Pagina inizio
  • 3632 (literal)
Pagina fine
  • 3634 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 82 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 21 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Univ Lecce, Dipartimento Ingn Innovaz, INFM, Unita Lecce,Natl Nanotechnol Lab, I-73100 Lecce, Italy; [ 2 ] CNR, Ist IMM, I-73100 Lecce, Italy; [ 3 ] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland; [ 4 ] CNR, Inst Photon & Nanotechnol, I-00156 Rome, Italy (literal)
Titolo
  • Comparison of radiative and structural properties of 1.3 mu m InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties (literal)
Abstract
  • We have studied the radiative and structural properties of identical InxGa(1-x) As quantum dot laser structures grown by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Despite the comparable emission properties found in the two devices by photoluminescence, electroluminescence, and photocurrent spectroscopy, efficient lasing from the ground state is achieved only in the MBE sample, whereas excited state lasing is obtained in the MOCVD device. Such a difference is ascribed to the existence of the internal dipole field in the MOCVD structure, induced by the strong faceting of the dots, as observed by high-resolution transmission electron microscopy. (literal)
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