Synthesis of InSb and InxGa1-xSb Thin Films from Electrodeposited Elemental Layers (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Synthesis of InSb and InxGa1-xSb Thin Films from Electrodeposited Elemental Layers (Articolo in rivista) (literal)

Anno

• 1991-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1007/BF01042452 (literal)

Alternative label

• Mengoli G.; Musiani M.M.; Paolucci F.; Gazzano, M. (1991)
  Synthesis of InSb and InxGa1-xSb Thin Films from Electrodeposited Elemental Layers
  in Journal of Applied Electrochemistry
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Mengoli G.; Musiani M.M.; Paolucci F.; Gazzano, M. (literal)

Pagina inizio

• 863 (literal)

Pagina fine

• 868 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://link.springer.com/article/10.1007%2FBF01042452 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 21 (literal)

Rivista

• Journal of Applied Electrochemistry (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 10 (literal)

Note

• ISI Web of Science (WOS) (literal)
• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• a Corso Stati Uniti 4, Istituto di Polarografia ed Elettrochimica Preparativa del CNR, Camin, Padova, 35020, Italy b Centro di Studio per la Fisica delle Macromolecole del CNR, via Selmi 2, Bologna, 40126, Italy (literal)

Titolo

• Synthesis of InSb and InxGa1-xSb Thin Films from Electrodeposited Elemental Layers (literal)

Abstract

• The synthesis of thin films of indium and indium-gallium antimonides was performed by a method involving electrodeposition steps and thermal annealing. Successive layers of the elements were deposited in the order Sb, In and, when necessary, Ga. The binary InSb compound was obtained when annealing was performed at temperatures slightly higher than the In melting point. Ternary InxGa1-xSb films were also prepared by a similar method. These were found to consist of a single phase for x>>-0.91 and of two phases, one rich in In and the other in Ga, for x<=0.84. The cubic lattice parameter was determined for all phases and used for calculating their composition, assuming Vegard's law as valid. (literal)

Prodotto di

• Institute of Condensed Matter Chemistry and Energy Technologies (ICMATE) (Istituto)
• Institute for organic syntheses and photoreactivity (ISOF) (Istituto)

Autore CNR

• MARCO MUSIANI (Persona)
• MASSIMO GAZZANO (Persona)

Insieme di parole chiave

• Parole chiave di "Synthesis of InSb and InxGa1-xSb Thin Films from Electrodeposited Elemental Layers" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for organic syntheses and photoreactivity (ISOF) (Istituto)
• Institute of Condensed Matter Chemistry and Energy Technologies (ICMATE) (Istituto)

Autore CNR di

• MARCO MUSIANI (Persona)
• MASSIMO GAZZANO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of Applied Electrochemistry (Rivista)

Insieme di parole chiave di

• Parole chiave di "Synthesis of InSb and InxGa1-xSb Thin Films from Electrodeposited Elemental Layers" (Insieme di parole chiave)