Ar annealing at 1600°C and 1650°C of Al+ implanted p+/n 4H-SiC diodes: analysis of the J-V characteristics versus annealing temperature (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Ar annealing at 1600°C and 1650°C of Al+ implanted p+/n 4H-SiC diodes: analysis of the J-V characteristics versus annealing temperature (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.4028/www.scientific.net/MSF.483-485.625 (literal)

Alternative label

• Fabio Bergamini, Francesco Moscatelli, Mariaconcetta Canino, Antonella Poggi , Roberta Nipoti (2005)
  Ar annealing at 1600°C and 1650°C of Al+ implanted p+/n 4H-SiC diodes: analysis of the J-V characteristics versus annealing temperature
  in Materials Science Forum
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Fabio Bergamini, Francesco Moscatelli, Mariaconcetta Canino, Antonella Poggi , Roberta Nipoti (literal)

Pagina inizio

• 625 (literal)

Pagina fine

• 628 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 483-485 (literal)

Rivista

• Materials Science Forum (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR- IMM Sezione di Bologna, via Gobetti 101, 40129 Bologna, Italy DIEI and INFN, Università di Perugia, via G. Duranti 93, 06125 Perugia, Italy (literal)

Titolo

• Ar annealing at 1600°C and 1650°C of Al+ implanted p+/n 4H-SiC diodes: analysis of the J-V characteristics versus annealing temperature (literal)

Abstract

• We report on the electrical characterization of Al+ implanted p+/n 4H-SiC diodes via a planar technology. Hot implantation at 400°C and post implantation annealing at 1600°C and 1650°C in high purity Argon ambient were done for the realization of p+/n diodes. The current voltage characteristics of the p+/n diodes and the resistivity of the implanted layer were measured at room temperature. The majority of the 136 measured diodes had a turn on voltage of 1.75 V for both annealing temperatures. The 1600°C annealed diodes showed an almost exponential forward characteristic with ideality factor equal to 1.4, an average reverse leakage current density equal to (4.8 ± 0.1)×10-9 A/cm2 at -100 V, and a break down voltage between 600 and 900V. The 1650°C annealed diodes often had forward \"excess current component\" that deviates from the ideal forward exponential trend. The average reverse leakage current density was equal to (2.7 ± 0.5)×10-8 A/cm2 at -100 V, and the breakdown voltage was between 700 and 1000V, i.e. it approached the theoretical value for the epitaxial 4H-SiC layer. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ANTONELLA POGGI (Unità di personale interno)
• FRANCESCO MOSCATELLI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ANTONELLA POGGI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• FRANCESCO MOSCATELLI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials Science Forum (Rivista)