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Analytic Modeling of RF MEMS Shunt Connected Capacitive Switches (Articolo in rivista)
- Type
- Label
- Analytic Modeling of RF MEMS Shunt Connected Capacitive Switches (Articolo in rivista) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1080/09205071.2012.710564 (literal)
- Alternative label
Bartolucci, G.a , De Angelis, G.ab, Lucibello, A.ab, Marcelli, R.b, Proietti, E.b (2012)
Analytic Modeling of RF MEMS Shunt Connected Capacitive Switches
in Journal of electromagnetic waves and applications (Print)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Bartolucci, G.a , De Angelis, G.ab, Lucibello, A.ab, Marcelli, R.b, Proietti, E.b (literal)
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- a Department of Electronic Engineering, University of Roma Tor Vergata, Roma, Italy
b Institute for Microelectronics and Microsystems, National Council of Research, Italy (literal)
- Titolo
- Analytic Modeling of RF MEMS Shunt Connected Capacitive Switches (literal)
- Abstract
- This paper deals with a general analytic approach for the design of RF microelectromechanical system (MEMS) switches. The chosen configuration for these microwave devices is composed of twocoplanar transmission line sections separated by a metal membrane providing a shunt connected variable impedance. Using a bias voltage it is possible to actuate the switch. The adopted methodology for the development of the circuital model is based on the image impedance parameter representation of a two-port network. Synthesis equations are presented, and design considerations are discussed. The proposed approach is validated by means of electromagnetic simulations. (literal)
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