http://www.cnr.it/ontology/cnr/individuo/prodotto/ID241106

PLD deposition of Tungsten Carbide contact for diamond photodiodes. Influence of process conditions on electronic and chemical aspects (Articolo in rivista)

Type

Prodotto della ricerca (Classe)
Articolo in rivista (Classe)

Label

PLD deposition of Tungsten Carbide contact for diamond photodiodes. Influence of process conditions on electronic and chemical aspects (Articolo in rivista) (literal)

Anno

2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

10.1016/j.apsusc.2013.02.016 (literal)

Alternative label

Cappelli, E.a , Bellucci, A.a, Orlando, S.b, Trucchi, D.M.a, Mezzi, A.c, Valentini, V.a (2013)
PLD deposition of Tungsten Carbide contact for diamond photodiodes. Influence of process conditions on electronic and chemical aspects
in Applied surface science; Elsevier Science Publishers B.V., Amsterdam (Paesi Bassi)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Cappelli, E.a , Bellucci, A.a, Orlando, S.b, Trucchi, D.M.a, Mezzi, A.c, Valentini, V.a (literal)

Pagina inizio

111 (literal)

Pagina fine

116 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

http://www.sciencedirect.com/science/article/pii/S0169433213003097 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

278 (literal)

Rivista

Applied surface science (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

6 (literal)

Note

ISI Web of Science (WOS) (literal)
Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

a CNR-IMIP, Montelibretti, via Salaria Km 29.3, P.O.B. 10, 00016 Rome, Italy b CNR-IMIP sez. Potenza, 85050 Tito Scalo, Potenza, Italy c CNR-ISMN, Montelibretti, via Salaria Km 29.3, P.O.B. 10, 00016 Rome, Italy (literal)

Titolo

PLD deposition of Tungsten Carbide contact for diamond photodiodes. Influence of process conditions on electronic and chemical aspects (literal)

Abstract

Tungsten carbide, WC, contacts behave as very reliable Schottky contacts for opto-electronic diamond devices. Diamond is characterized by superior properties in high-power, high frequency and hightemperature applications, provided that thermally stable electrode contacts will be realized. Ohmic contacts can be easily achieved by using carbide-forming metals, while is difficult to get stable Schottky contacts at elevated temperatures, due to the interface reaction and/or inter-diffusion between metals and diamond. Novel type of contacts, made of tungsten carbide, WC, seem to be the best solution, for their excellent thermal stability, high melting point, oxidation and radiation resistance and good electrical conductivity. Our research was aimed at using pulsed laser deposition forWCthin film deposition, optimizing experimental parameters, to obtain a final device characterized by excellent electronic properties, as a detector for radiation in deep UV or as X-ray dosimeter. We deposited our films by laser ablation from a target of pure WC, using different reaction conditions (i.e., substrate heating, vacuum or reactive atmosphere (CH4/Ar), RF plasma activated), to optimize both the stoichiometry of the film and its structure. Trying to obtain a material with the best electronic response, we used also two sources of laser radiation for target ablation, i.e., nano-second pulsed excimer laser ArF, and ultra-short fs Ti:Sapphire laser. The structure and chemical aspects have been evaluated by Raman and X-ray photoelectron spectroscopy (XPS), while the dosimeter photodiode response has been tested by the I-V measurements, under soft X-ray irradiation. (literal)

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