Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.mee.2012.11.024 (literal)

Alternative label

• S. Carta 1 , R. Bagni 2, E. Giovine 1, V Foglietti 1, F. Evangelisti 2, A. Notargiacomo 1 (2013)
  Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques
  in Microelectronic engineering
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• S. Carta 1 , R. Bagni 2, E. Giovine 1, V Foglietti 1, F. Evangelisti 2, A. Notargiacomo 1 (literal)

Pagina inizio

• 230 (literal)

Pagina fine

• 233 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://dx.doi.org/10.1016/j.mee.2012.11.024 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• Volume 110 (literal)

Rivista

• Microelectronic engineering (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1 CNR - Institute for Photonics and Nanotechnology, Via Cineto Romano 42, 00156 Rome, Italy 2 Physics Department \"E. Amaldi\", Università degli Studi Roma TRE,Via della Vasca Navale 84, 00146 Rome, Italy (literal)

Titolo

• Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques (literal)

Abstract

• We present the fabrication and characterization of novel high density field emitter arrays (FEAs) on CVD-grown epitaxial germanium on (0 0 1) silicon. In particular we propose a heterostructure made up of silicon as substrate and of germanium as active layer, exploiting the infrared transparency of Si and the infrared sensitivity of Ge to realize a semi-transparent photo-assisted electron beam source. We used a completely dry etching process in fluorinated gases (SF6) due to its significant under-etching for both silicon and germanium. High aspect ratio silicon and germanium FEAs, with minimum tip radii of 25 nm and 40 nm, respectively, and lower aspect ratio Ge/Si FEAs with minimum tip radii of 50 nm were fabricated. The realized FEAs show good emission behavior with field emission characteristics straight related to tip geometry: low electric field threshold for silicon and germanium tips (<18 V/?m) and enhancement factor of more than 250 and 130, respectively; conversely for the epitaxial germanium we obtained 32 V/?m for electric field threshold and 70 for enhancement factor. Current emission time stability for silicon, for germanium and for Ge/Si field emitter arrays were demonstrated. (literal)

Prodotto di

• Materiali Magnetici Nanostrutturati (MD.P04.003.001) (Modulo)
• Institute of structure of matter (ISM) (Istituto)

Autore CNR

• STEFANO CARTA (Persona)
• ANDREA NOTARGIACOMO (Unità di personale interno)
• FLORESTANO EVANGELISTI (Unità di personale esterno)
• ROBERTA BAGNI (Persona)
• VITTORIO FOGLIETTI (Persona)
• ENNIO GIOVINE (Persona)

Incoming links:

Autore CNR di

• ENNIO GIOVINE (Persona)
• VITTORIO FOGLIETTI (Persona)
• FLORESTANO EVANGELISTI (Unità di personale esterno)
• STEFANO CARTA (Persona)
• ROBERTA BAGNI (Persona)
• ANDREA NOTARGIACOMO (Unità di personale interno)

Prodotto

• Institute of structure of matter (ISM) (Istituto)
• Materiali Magnetici Nanostrutturati (MD.P04.003.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Microelectronic engineering (Rivista)