ORDERING OF SULFUR INTERLAYER IN MOLECULAR-BEAM EPITAXY-GROWN SRF2,/S/GAAS(111)A AND SRF2,/S/GAAS(111)B (Articolo in rivista)

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  • ORDERING OF SULFUR INTERLAYER IN MOLECULAR-BEAM EPITAXY-GROWN SRF2,/S/GAAS(111)A AND SRF2,/S/GAAS(111)B (Articolo in rivista) (literal)
Anno
  • 1995-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/0022-0248(95)80109-P (literal)
Alternative label
  • SUGIYAMA, M (SUGIYAMA, M); MAEYAMA, S (MAEYAMA, S); WATANABE, Y (WATANABE, Y); HEUN, S (HEUN, S); OSHIMA, M (OSHIMA, M) (1995)
    ORDERING OF SULFUR INTERLAYER IN MOLECULAR-BEAM EPITAXY-GROWN SRF2,/S/GAAS(111)A AND SRF2,/S/GAAS(111)B
    in Journal of crystal growth
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • SUGIYAMA, M (SUGIYAMA, M); MAEYAMA, S (MAEYAMA, S); WATANABE, Y (WATANABE, Y); HEUN, S (HEUN, S); OSHIMA, M (OSHIMA, M) (literal)
Pagina inizio
  • 1098 (literal)
Pagina fine
  • 1103 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 150 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1-4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • NIPPON TELEGRAPH & TEL PUBL CORP,INTERDISCIPLINARY RES LABS,3-9-11 MIDORI,MUSASHINO,TOKYO 180,JAPAN. (literal)
Titolo
  • ORDERING OF SULFUR INTERLAYER IN MOLECULAR-BEAM EPITAXY-GROWN SRF2,/S/GAAS(111)A AND SRF2,/S/GAAS(111)B (literal)
Abstract
  • SrF2 films are epitaxially grown on sulfur-passivated GaAs(111)A and GaAs(111)B at a substrate temperature of 430 degrees C. The epitaxial relations of these SrF2/S/GaAs{111} systems are type A. The position and the ordering degree of sulfur interlayer were investigated by soft X-ray standing-wave (soft-XSW) triangulation studies. By the SrF2 epitaxial growth, the ordering degrees of the sulfur interlayer are reduced. The in-plane distribution of the sulfur interlayer is more disordered than the surface normal one, indicating that sulfur atoms buried under the SrF2 epitaxial layers grown at 430 degrees C do not homogeneously occupy identical in-plane sites. (literal)
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