http://www.cnr.it/ontology/cnr/individuo/prodotto/ID240620
ORDERING OF SULFUR INTERLAYER IN MOLECULAR-BEAM EPITAXY-GROWN SRF2,/S/GAAS(111)A AND SRF2,/S/GAAS(111)B (Articolo in rivista)
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- ORDERING OF SULFUR INTERLAYER IN MOLECULAR-BEAM EPITAXY-GROWN SRF2,/S/GAAS(111)A AND SRF2,/S/GAAS(111)B (Articolo in rivista) (literal)
- Anno
- 1995-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/0022-0248(95)80109-P (literal)
- Alternative label
SUGIYAMA, M (SUGIYAMA, M); MAEYAMA, S (MAEYAMA, S); WATANABE, Y (WATANABE, Y); HEUN, S (HEUN, S); OSHIMA, M (OSHIMA, M) (1995)
ORDERING OF SULFUR INTERLAYER IN MOLECULAR-BEAM EPITAXY-GROWN SRF2,/S/GAAS(111)A AND SRF2,/S/GAAS(111)B
in Journal of crystal growth
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- SUGIYAMA, M (SUGIYAMA, M); MAEYAMA, S (MAEYAMA, S); WATANABE, Y (WATANABE, Y); HEUN, S (HEUN, S); OSHIMA, M (OSHIMA, M) (literal)
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- NIPPON TELEGRAPH & TEL PUBL CORP,INTERDISCIPLINARY RES LABS,3-9-11 MIDORI,MUSASHINO,TOKYO 180,JAPAN. (literal)
- Titolo
- ORDERING OF SULFUR INTERLAYER IN MOLECULAR-BEAM EPITAXY-GROWN SRF2,/S/GAAS(111)A AND SRF2,/S/GAAS(111)B (literal)
- Abstract
- SrF2 films are epitaxially grown on sulfur-passivated GaAs(111)A and GaAs(111)B at a substrate temperature of 430 degrees C. The epitaxial relations of these SrF2/S/GaAs{111} systems are type A. The position and the ordering degree of sulfur interlayer were investigated by soft X-ray standing-wave (soft-XSW) triangulation studies. By the SrF2 epitaxial growth, the ordering degrees of the sulfur interlayer are reduced. The in-plane distribution of the sulfur interlayer is more disordered than the surface normal one, indicating that sulfur atoms buried under the SrF2 epitaxial layers grown at 430 degrees C do not homogeneously occupy identical in-plane sites. (literal)
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