Lateral inhomogeneities in engineered Schottky barriers (Articolo in rivista)

Type
Label
  • Lateral inhomogeneities in engineered Schottky barriers (Articolo in rivista) (literal)
Anno
  • 1999-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/S0022-0248(98)01472-9 (literal)
Alternative label
  • Heun, S (Heun, S); Schmidt, T (Schmidt, T); Slezak, J (Slezak, J); Diaz, J (Diaz, J); Prince, KC (Prince, KC); Muller, BH (Muller, BH); Franciosi, A (Franciosi, A) (1999)
    Lateral inhomogeneities in engineered Schottky barriers
    in Journal of crystal growth
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Heun, S (Heun, S); Schmidt, T (Schmidt, T); Slezak, J (Slezak, J); Diaz, J (Diaz, J); Prince, KC (Prince, KC); Muller, BH (Muller, BH); Franciosi, A (Franciosi, A) (literal)
Pagina inizio
  • 795 (literal)
Pagina fine
  • 799 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 201 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Sincrotrone Trieste, I-34012 Trieste, Italy [ 2 ] INFM, TASC, Lab Nazl, Area Ric, I-34012 Trieste, Italy [ 3 ] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA [ 4 ] Univ Trieste, Dipartmento Fis, I-34127 Trieste, Italy (literal)
Titolo
  • Lateral inhomogeneities in engineered Schottky barriers (literal)
Abstract
  • We have measured the lateral homogeneity in Al/GaAs(0 0 1) Schottky barriers engineered for low barrier height through fabrication of a Si layer at the interface under As flux. We used a spectroscopic photo emission and low-energy electron microscope (SPELEEM) which combines a low-energy electron microscope with an imaging band pass filter to allow spatially resolved synchrotron radiation photoemission experiments. As-grown samples with a Si interlayer thickness of 0.5 and 3 monolayers appeared homogeneous within the spatial resolution of the SPELEEM (22 nm). Annealing an Al/Si(As)/GaAs(0 0 1) heterostructure for 10 min at 500 degrees C, however, caused inhomogeneous As outdiffusion which is correlated with a local As 3d core level shift of 0.3 eV. We suggest that the reported degradation of such engineered Schottky barriers might be correlated with laterally inhomogeneous As out-diffusion upon annealing. (literal)
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