Electro-optic properties of InGaAs/GaAs quantum wires with V-shaped profile (Articolo in rivista)

Type
Label
  • Electro-optic properties of InGaAs/GaAs quantum wires with V-shaped profile (Articolo in rivista) (literal)
Anno
  • 1998-01-01T00:00:00+01:00 (literal)
Alternative label
  • Rinaldi, R., Passaseo, A., De Giorgi, M., Turco, C., Devittorio, M., Cannoletta, D., Cingolani, R. (1998)
    Electro-optic properties of InGaAs/GaAs quantum wires with V-shaped profile
    in Solid-state electronics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Rinaldi, R., Passaseo, A., De Giorgi, M., Turco, C., Devittorio, M., Cannoletta, D., Cingolani, R. (literal)
Pagina inizio
  • 1239 (literal)
Pagina fine
  • 1243 (literal)
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  • 42 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 7-8 (literal)
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  • Ist. Naz. di Fisica della Materia, Department of Materials Science, University of Lecce, via Arnesano, 73100 Lecce, Italy (literal)
Titolo
  • Electro-optic properties of InGaAs/GaAs quantum wires with V-shaped profile (literal)
Abstract
  • We have investigated the electro-optic properties of V-shaped InGaAs/GaAs quantum wires grown by MOCVD on patterned GaAs substrates. Two basic nanostructures have been fabricated: (i) single quantum wires and (ii) vertically stacked wires with different thickness of the barriers. The former exhibit a strong polarization anisotropy between the ground and the first excited states. The vertically stacked wires exhibit the formation of symmetric and antisymmetric states and a strong vertical coupling of the wavefunctions for narrow barrier widths. Based on these prototype structures we have fabricated an electro-optic modulator in wave-guide which exhibits a strong quantum confined Stark effect at room temperature, with bias as low as -2 V. The multiple wire stack has been used for the fabrication of a p-i-n quantum wire light emitter with the unprecedentedly low current threshold of 0.3 mA/ cm 2 at low temperature (literal)
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