http://www.cnr.it/ontology/cnr/individuo/prodotto/ID239614
Persistent photocurrent effects in GaN/AlGaN multiquantum wells (Contributo in atti di convegno)
- Type
- Label
- Persistent photocurrent effects in GaN/AlGaN multiquantum wells (Contributo in atti di convegno) (literal)
- Anno
- 2001-01-01T00:00:00+01:00 (literal)
- Alternative label
Bonfiglio, A.a, Traetta, G.b, Lomascolo, M.c, Passaseo, A.b, Cingolani, R.b (2001)
Persistent photocurrent effects in GaN/AlGaN multiquantum wells
in 2001 MRS Spring Meeting, San Francisco, CA; United States
(literal)
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- Bonfiglio, A.a, Traetta, G.b, Lomascolo, M.c, Passaseo, A.b, Cingolani, R.b (literal)
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- Unita' INFM, Dept. Ingegneria Elettrica ed Elettronica, University of Cagliari, Italy
b Unita' INFM, Dept. Ingegneria dell'Innovazione, University of Lecce, Italy
c IME-CNR, Via Arnesano, 1-73100, Lecce, Italy (literal)
- Titolo
- Persistent photocurrent effects in GaN/AlGaN multiquantum wells (literal)
- Abstract
- PhotoCurrent (PC) experiments on GaN/AlGaN multiple quantum wells, both spectrally and temporally resolved, have shown that a photopersistence effect exists in our samples even at room temperature. A peak in the rise and decay times of PC vs. time appears in correspondence of wavelengths typical of Yellow-Band features while this is not seen in PL. This fact seems to indicate that YB defects give rise here to carrier trapping rather than recombination. Furthermore, the observed persistence times seem to be peculiar of MultiQuantum Wells and this possibly calls into play the role of built-in fields in the defects dynamics (literal)
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