Sol-Gel materials for Photonics (Comunicazione a convegno)

Type
Label
  • Sol-Gel materials for Photonics (Comunicazione a convegno) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Alternative label
  • L. Zampedri, M. Ferrari, C. Armellini, R.R. Gonçalves, C. Tosello, E. Moser, M. Montagna, M. Mattarelli, A. Chiasera, H. Portales, G.C. Righini, S. Pelli, S.J.L. Ribeiro, Y. Messaddeq, A. Mintoti, V. Foglietti (2002)
    Sol-Gel materials for Photonics
    in 6th International Workshop on Laser Physics and its Applications, Tunis, Tunisia, 11-17 December 2002
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • L. Zampedri, M. Ferrari, C. Armellini, R.R. Gonçalves, C. Tosello, E. Moser, M. Montagna, M. Mattarelli, A. Chiasera, H. Portales, G.C. Righini, S. Pelli, S.J.L. Ribeiro, Y. Messaddeq, A. Mintoti, V. Foglietti (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IFN Istituto di Fotonica e Nanotecnologie, CSMFO group, via Sommarive 14, 38050 Povo, Trento, Italy Dipartimento di Ingegneria dei Materiali, Università di Trento, Via Mesiano 77, I-38050 Trento, Italy Dipartimento di Fisica and INFM, Università di Trento, via Sommarive 14, I-38050 Povo, Trento, Italy Dipartimento di Fisica and INFM, Università di Padova, via Marzolo 8, I-35131 Padova, Italy, CNR-IFAC Istituto di Fisica Applicata \"Nello Carrara\", via Panciatichi 64, I-50127 Firenze, Italy Instituto de Quìmica-UNESP, P.O. Box 355, 14801-970 Araraquara, SP, Brazil CNR-IFN Istituto di Fotonica e Nanotecnologie, MEMS group, Via Cineto Romano 42, I-00156 Roma, Italy (literal)
Titolo
  • Sol-Gel materials for Photonics (literal)
Abstract
  • One of the technologies that may make easier the progress in photonic systems is concerned with the development of efficient fabrication techniques for innovative glass matrices doped by optically active ions. The equipment-intensive character of most conventional fabrication techniques encourages the development of new and less expensive processes. On this subject, sol-gel processing is an interesting alternative to other technologies because of potential low costs and relative easiness of production. Several materials for integrated optics (IO) technologies have been fabricated in many industrials and research laboratories by sol-gel route. For instance, Bell Laboratories and Lucent Technologies have adjusted sol-gel processes to produce optical fibers. Recently, Terahertz Photonics of Scotland has claimed to have perfected the use of sol-gel process for fabrication of Planar Lightwave Circuits; moreover, Huang et al. have been demonstrated the feasibility of and Erbium-doped silica-on-silicon planar waveguide optical amplifier, and a 5.4-dB fibre-device-fibre gain has been achieved using a 5-cm long chip [1]. SiO2 -based sol-gel glasses activated by Er3+ ions are attractive materials for IO devices such as optical amplifiers operating in the C-telecommunications band. Nevertheless, some problems still limit the performance of the sol-gel planar components. A major problem of this technique is that purely inorganic films thicker than about 1 micron are difficult to fabricate, because of stress failure resulting from the high degree of shrinkage inherent in the process. Moreover, the fluorescence performance of the rare-earth ion can be strongly reduced by the presence of residual OH groups in the glass. A general problem, instead, is that in IO amplifiers the optical path cannot be very long, and consequently a large erbium concentration is needed to obtain sufficient optical gain. However, at high Er3+ concentrations, energy transfer processes, such us upconversion or energy migration, can take place lowering the luminescence quantum efficiency from the 4I13/2 excited-state which is responsible of amplification in the C-telecommunications band. In this lecture, we present results about innovative sol-gel silica-based glasses for photonic application. Structural, optical and spectroscopic properties of Er2O3-SiO2 monolithic glasses, erbium activated SiO2-TiO2 and SiO2-HfO2 planar and channel-waveguides, which can be considered for production of active IO devices, will be reported. [1] W. Huang, R. R. A. Syms, E. M. Yeatman, M. M. Ahmad, T. V. Clapp, and S. M. Ojha, IEEE PHOTONICS TECHNOLOGY LETTERS, 14 (2002) pp. 959-961. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Prodotto
Autore CNR di
Insieme di parole chiave di
data.CNR.it